IRF1010ES ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1010ESTRLPBF ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1010EZ ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications,®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremel ..
IRF1010EZPBF ,AUTOMOTIVE MOSFETapplications and a wide variety of other applica-tions.Absolute Maximum RatingsParameter Max. Units ..
IRF1010EZS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications and a wide variety of other applica-tions.Absolute Maximum RatingsParameter Max. Units ..
IRF1010N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IS61LV25616AL-12T , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-10T , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12KI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616L-12TI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV256-20J , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV2568-10T , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IRF1010ES
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 84D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 59 AD C GSI Pulsed Drain Current 330DMP @T = 25°C Power Dissipation 200 WD CLinear Derating Factor 1.4 W/°CV Gate-to-Source Voltage ± 20 VGSI Avalanche Current 50 AARE Repetitive Avalanche Energy 17 mJARdv/dt Peak Diode Recovery dv/dt 4.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.75θJC°C/WR Junction-to-Ambient (PCB mount)** ––– 40θJA 102/14/02Downloaded from: http://www.ic-phoenix.com/stock/IRF1010ES/IRF1010EL
