IRF1010EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91670IRF1010E®HEXFET Power MOSFETl Advanced Process TechnologyDV = 60Vl Ultra Low On-Resistanc ..
IRF1010ES ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1010ESTRLPBF ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1010EZ ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications,®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremel ..
IRF1010EZPBF ,AUTOMOTIVE MOSFETapplications and a wide variety of other applica-tions.Absolute Maximum RatingsParameter Max. Units ..
IRF1010EZS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications and a wide variety of other applica-tions.Absolute Maximum RatingsParameter Max. Units ..
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IRF1010E-IRF1010E.-IRF1010EPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeTO-220ABto its wide acceptance throughout the industry.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 84D C GSI @ T = 100°C Continuous Drain Current, V @ 10V 59 AD C GSI Pulsed Drain Current 330DMP @T = 25°C Power Dissipation 200 WD CLinear Derating Factor 1.4 W/°CV Gate-to-Source Voltage ± 20 VGSI Avalanche Current 50 AARE Repetitive Avalanche Energy 17 mJARdv/dt Peak Diode Recovery dv/dt 4.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.75θJCR Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WθCSR Junction-to-Ambient ––– 62θJA 13/16/01IRF1010E
