IRCZ44 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD - 9.529BIRCZ44®HEXFET Power MOSFETl Dynamic dv/dt RatingV = 60VDSSl Current Sensel 175°C Operati ..
IRF1010E ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF1010E. ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF1010EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91670IRF1010E®HEXFET Power MOSFETl Advanced Process TechnologyDV = 60Vl Ultra Low On-Resistanc ..
IRF1010ES ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1010ESTRLPBF ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IS61LV256-15TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV25616-10TI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-15KI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IRCZ44
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
PD - 9.529BIRCZ44®HEXFET Power MOSFETl Dynamic dv/dt RatingV = 60VDSSl Current Sensel 175°C Operating TemperatureR = 0.028ΩDS(on)l Fast Switchingl Ease of ParallelingI = 50*Al Simple Drive RequirementsDDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance andcost-effectiveness.The HEXSense device provides an accurate fraction of the drain current throughthe additional two leads to be used for control or protection of the device. Thesedevices exhibit similar electrical and thermal characteristics as their IRF-seriesequivalent part numbers. The provision of a kelvin source connection effectivelyeliminates problems of common source inductance when the HEXSence isused as a fast, high-current switch in non current-sensing
