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IRCZ34
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
applications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V 30D C GSAI @ T = 100°C Continuous Drain Current, V @ 10V 21D C GSI Pulsed Drain Current 120DMP @T = 25°C Power Dissipation 88 WD CLinear Derating Factor 0.59 W/°CV Gate-to-Source Voltage ±20 VGSE Single Pulse Avalanche Energy 15 mJASdv/dt Peak Diode Recovery dv/dt 4.5 AT Operating Junction and -55 to + 175J°CT Storage Temperature RangeSTGSoldering Temperature, for 10 seconds 300 (1.6mm from case)Mounting Torque, 6-32 or screw 10 lbf•in (1.1 N•m)Thermal ResistanceParameter Min. Max. UnitsR Junction-to-Case — — 1.7θJCR Case-to-Sink, Flat, Greased Surface — 0.50 — °C/WθCSR Junction-to-Ambient — — 62θJA** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.C-7IRCZ34