IRC840 ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD-9.593B
lRC840
International
TOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rati ..
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IRC840
500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
PD-9.593B
lRC840
International
TOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
. Repetitive Avalanche Rated
q CurrentSense
. FastSwitching
. Ease of Paralleling
. Simple Drive Requirements
Voss = 500V
RDS(on) = 0.85f2
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current
through the additional two leads to be used for control or protection of the
device. These devices exhibit similar electrical and thermal characteristics as
their IFIF-series equivalent part numbers. The provision of a kelvin source
connection effectively eliminates problems of common source inductance
when the HEXSense is used as a fast, high-current switch in non current-
sensing
