IRC644 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
TOR
Rectifier
PD-9.569A
IRC644
HEXFET® Power MOSFET
. Dynamic dv/dt ..
IRC740 ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
VDSS = 400V
RDS(on) = 0.5592
Parameter Max. Units
..
IRC840 ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD-9.593B
lRC840
International
TOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rati ..
IRCZ24 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
IRCZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD - 9.590AIRCZ34®HEXFET Power MOSFETl Dynamic dv/dt RatingV = 60VDSSl Current Sensel 175°C Operati ..
IRCZ34 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.TO-220 HexSenseAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Dra ..
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IRC644
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
International
TOR
Rectifier
PD-9.569A
IRC644
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
q Repetitive Avalanche Rated
. CurrentSense
q Fast Switching
0 Ease of Paralleling
. Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current
through the additional two leads to be used for control or protection of the
device. These devices exhibit similar electrical and thermal characteristics as
their IRF-series equivalent part numbers, The provision of a kelvin source
connection effectively eliminates problems of common source inductance
when the HEXSense is used as a fast, high-current switch in non current-
sensing
