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IRC不知厂家N/a762avaiPower MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)


IRC ,Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)applications. Absolute Maximum Ratings PD-9.565B IRC630 TO-22O HexSense Parameter Ma ..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational IEER Rectifier PD-9.454D IRCSBO HEXFET® Power MOSFET Dynamic dv/dt ..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications. Absolute Maximum Ratings TO-220 HexSense Parameter Max. Units ID @ To = 25°C ..
IRC540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagehnternati onal TOR Rectifier PD-9.592A TlC540 HEXFET® Power MOSFET q Dynamic dv/d ..
IRC630 ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications. Absolute Maximum Ratings PD-9.565B IRC630 TO-22O HexSense Parameter Ma ..
IRC634 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications. Absolute Maximum Ratings TO4t20 HexSense - _-_ Parameter Max. Units 19 @ Tc = ..
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IRC
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)
applications. Absolute Maximum Ratings PD-9.565B IRC630 TO-22O HexSense Parameter Max. Units ID @ To = 25°C Continuous Drain Current, Vas © 10 V 9.0 In @ To = 100°C Continuous Drain Current, Vss © 10 V 5.7 A IDM Pulsed Drain Current OD 36 Pro @ To = 25°C Power Dissipation 74 W Linear Derating Factor 0.59 WPC Ves Gate-to-Source Voltage :20 V EAS Single Pulse Avalanche Ermy © 150 mJ IAFl Avalanche Current (D 9.0 A EAR Repetitive Avalanche Energy (D 7.4 mJ dv/dt PeakDiode Recovery dv/dt © 5.0 V/ns Tu Operating Junction and -55 to +150 TSTS Storage Temperature Range ''C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibf.in (1.1 N.m) Thermal Resistance Parameter Min. - Typ. Max. Units ReJc Junction-to-Case - r - 1 .7 Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W ReJA Junction-to-Ambient - - 62 17 DATA SHEETSIRC630 TOR
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