IRAMX20UP60A ,20A, 600V with open Emitter PinsFeatures• Integrated Gate Drivers• Temperature Monitor• Overcurrent shutdown• Fully Isolated Packag ..
IRAMY20UP60B ,iMOTION Series 20A, 600VFeatures• Integrated Gate Drivers• Temperature Monitor and Protection• Overcurrent shutdown• Fully ..
IRC ,Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)applications.
Absolute Maximum Ratings
PD-9.565B
IRC630
TO-22O HexSense
Parameter Ma ..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
IEER
Rectifier
PD-9.454D
IRCSBO
HEXFET® Power MOSFET
Dynamic dv/dt
..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO-220 HexSense
Parameter Max. Units
ID @ To = 25°C ..
IRC540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagehnternati
onal
TOR Rectifier
PD-9.592A
TlC540
HEXFET® Power MOSFET
q Dynamic dv/d ..
IS61LV12816L-8T , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-8TL , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10B , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQ , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQI , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-8BI , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IRAMX20UP60A
20A, 600V with open Emitter Pins
Features• Integrated Gate Drivers• Temperature Monitor• Overcurrent shutdown• Fully Isolated Package• Low VCE (on) Non Punch Through IGBT Technology.• Undervoltage lockout for all channels• Matched propagation delay for all channels• 5V Schmitt-triggered input logic• Cross-conduction prevention logic• Lower di/dt gate driver for better noise immunity• Motor Power range 0.75~1.5kW / 85~253 Vac• Isolation 2000V minRMS Absolute Maximum RatingsParameter Description Max. Value UnitsV / VIGBT/Diode Blocking Voltage 600CES RRMV+Positive Bus Input Voltage 450VI @ T =25°C RMS Phase Current (Note 1) 20O CI @ T =100°C RMS Phase Current (Note 1) 10 AO CIPulsed RMS Phase Current (Note 2) 30OFPWM Carrier Frequency 20 kHzPWMP Power dissipation per IGBT @ T =25°C 38 Wd CV Isolation Voltage (1min) 2000 VISO RMST (IGBT & Diodes) Operating Junction temperature Range -40 to +150J°CT (Driver IC)J Operating Junction temperature Range -40 to +150T Mounting torque Range (M3 screw) 0.5 to 0.6 Nm+Note 1: Sinusoidal Modulation at V =400V, T =150°C, F =16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.J PWMNote 2: t <100ms; T =25°C; F =16kHz.P C PWM 1IRAMX20UP60AInternal Electrical Schematic - IRAMX20UP60B+V (10)VRU (12)VRV (13)VRW (14)VB1 (7)U, VS1 (8)VB2 (4)V, VS2 (5)VB3 (1)W, VS3 (2)22 21 20 19 18 1723 VS1LO1 16VB2 HO2 VS2 VB3 HO3 VS324 HO1LO2 1525 VB11 VCCDriver ICLO3 142 HIN1HIN1 (15)HIN2 (16) 3 HIN24 HIN3HIN3 (17)LIN2 LIN3 F ITRIP EN RCIN VSS COM5 LIN1 6 7 8 9 10 11 12 13LIN1 (18)LIN2 (19)LIN3 (20)T/I (21)TRIPTHERMISTORV (22)CCV (23)SS2 IRAMX20UP60AAbsolute Maximum Ratings (Continued)All voltages are absolute referenced to COM.Symbol Parameter Min Max Units Conditionst = 10ms,Bootstrap Diode Peak Forward PI --- 4.5 ABDFT = 150°C, T =100°CCurrentJ Ct =100µs, T =100°CBootstrap Resistor Peak Power P C P --- 25.0 WBR Peak(Single Pulse) ESR / ERJ seriesHigh Side floating supply V V - 25 V +0.3 VS1,2,3 B1,2,3 B1,2,3voltageVHigh Side floating supply voltage -0.3 600 VB1,2,3Low Side and logic fixed supply V-0.3 20 VCCvoltageLower of (V +15V) or V Input voltage LIN, HIN, T/I -0.3 VIN Trip SSV +0.3VCCInverter Section
