IRAMX16UP60B-2 ,16A, 600V Integrated Power Hybrid IC with internal shunt resistorFeatures• Internal Shunt Resistor• Integrated Gate Drivers and Bootstrap Diodes• Temperature Monito ..
IRAMX20UP60A ,20A, 600V with open Emitter PinsFeatures• Integrated Gate Drivers• Temperature Monitor• Overcurrent shutdown• Fully Isolated Packag ..
IRAMY20UP60B ,iMOTION Series 20A, 600VFeatures• Integrated Gate Drivers• Temperature Monitor and Protection• Overcurrent shutdown• Fully ..
IRC ,Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)applications.
Absolute Maximum Ratings
PD-9.565B
IRC630
TO-22O HexSense
Parameter Ma ..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
IEER
Rectifier
PD-9.454D
IRCSBO
HEXFET® Power MOSFET
Dynamic dv/dt
..
IRC530 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO-220 HexSense
Parameter Max. Units
ID @ To = 25°C ..
IS61LV12816L-8T , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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IS61LV12824-10B , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQ , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQI , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-8BI , 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IRAMX16UP60B-2
16A, 600V Integrated Power Hybrid IC with internal shunt resistor
Features• Internal Shunt Resistor• Integrated Gate Drivers and Bootstrap Diodes• Temperature Monitor• Low V Non Punch Through IGBT TechnologyCE(on)• Undervoltage lockout for all channels• Matched propagation delay for all channels• Schmitt-triggered input logic• Cross-conduction prevention logic• Lower di/dt gate driver for better noise immunity• Motor Power range 0.75~2.2kW / 85~253 Vac• Isolation 2000V minRMS • UL certification pending (UL number: E78996) Absolute Maximum RatingsParameter Description Value UnitsV / VIGBT/Diode Blocking Voltage 600CES RRMV+Positive Bus Input Voltage 450VI @ T =25°C RMS Phase Current (Note 1) 16O CI @ T =100°C RMS Phase Current (Note 1) 8 AO CI Pulsed RMS Phase Current (Note 2) 30OFPWM PWM Carrier Frequency 20 kHzP Power dissipation per IGBT @ T =25°C31 WD CV VIsolation Voltage (1min) 2000ISO RMST (IGBT & Diodes)Operating Junction temperature Range -40 to +150J°CT (Driver IC) Operating Junction temperature Range -40 to +150JT Mounting torque Range (M3 screw) 0.5 to 1.0 Nm+Note 1: Sinusoidal Modulation at V =400V, T =150°C, F =16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.J PWMNote 2: t <100ms; T =25°C; F =16kHz. Limited by I , see Table "Inverter Section
