IRAM136-1060BS ,I0A, 600V Integrated Power Module with Internal Shunt ResistorFeatures Internal Shunt Resistor and current feedback Integrated gate drivers and bootstrap dio ..
IRAM136-1061A2 ,10AFeatures Integrated gate drivers and bootstrap diodes Temperature monitor Protection shutdow ..
IRAMS06UP60A-2 ,Plug n Drive Integrated Power ModuleFeatures• Integrated Gate Drivers and Bootstrap Diodes• Tem perat ure Monit or• Overcurrent shut do ..
IRAMS06UP60B ,Plug n Drive Integrated Power Module. Similar to IRAMS06UP60A with Internal Shunt Resistor.Features• Internal Shunt Resistor• Integrated Gate Drivers and Bootstrap Diodes• Temperature Monito ..
IRAMS10UP60A ,Plug n Drive Intelligent Power ModulesFeatures• Integrated Gate Drivers and Bootstrap Diodes.• Temperature Monitor• Temperature and Overc ..
IRAMS10UP60A ,Plug n Drive Intelligent Power Modulesapplications such as washing machines and refrigerators. Plug N Drivetechnology offers an extremely ..
IS61LV12816-15LQ , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816-15LQI , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816-15T , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816-15TI , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816-15TI , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L-10BI , 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IRAM136-1060BS
I0A, 600V Integrated Power Module with Internal Shunt Resistor
Features Internal Shunt Resistor and current feedback Integrated gate drivers and bootstrap diodes Temperature feedback Programmable over current protection pin High efficiency Trench IGBT technology Under-voltage lockout for all channels Matched propagation delay for all channels 3.3V/5V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power range 0.25~0.75kW / 85~253 Vac Isolation 2000V min and CTI> 600 RMS Absolute Maximum RatingsV / V IGBT/ FW Diode Blocking Voltage 600CES RRMV+Positive Bus Input Voltage 450VI @ T =25°CRMS Phase Current (Note 1) 10o CI @ T =100°C ARMS Phase Current (Note 1) 5o CIMaximum Peak Phase Current (Note 2) 13pkFMaximum PWM Carrier Frequency 20 kHzpP Maximum Power dissipation per IGBT @ T =25°C25 Wd CV VIsolation Voltage (1min) 2000ISO RMST (IGBT & Diode & IC) Maximum Operating Junction Temperature +150JT Operating Case Temperature Range -20 to +100 °CCT Storage Temperature Range -40 to +125STGT Mounting torque Range (M3 screw) 0.8 to 1.0 Nm+Note 1: Sinusoidal Modulation at V =400V, T =150°C, F =16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.J PWMNote 2: t <100ms, TC=25°C, F =16kHz.P PWM 1 Downloaded from: http://www.ic-phoenix.com/stock/IRAM136-1060BS Internal Electrical Schematic – IRAM136-1060BS V+ (13)Q1 D1 Q2 D2 Q3 D3Q4 D4 Q5 D5 Q6 D6V- (16)R1VB1 (9)C1R3R2U, VS1 (10)VB2 (5)C2V, VS2 (6)VB3 (1)C3R4 R5 R6W, VS3 (2)D7 D8 D922 21 20 19 18 1723 VS1 VB2 HO2 VS2 VB3 HO3 VS3 LO1 1624 HO1R1325 VB1 LO2 151 VCCDriver IC2 HIN1 LO3 14HIN1 (17)3 HIN2HIN2 (18)COM 134 HIN3HIN3 (19)LIN2 LIN3 F ITRIP EN RCINLIN1 VSS6 7 8 9 10 115 12LIN1 (20)LIN2 (21)LIN3 (22)FLT/EN (23)R8I_FB (24)R10VCC (25)R9ISD (27)RCIN (28)C7R12C6VTH (29)C4VSS (26)2 Downloaded from: http://www.ic-phoenix.com/stock/ IRAM136-1060BS Absolute Maximum Ratings (Continued)Symbol Parameter Min Max UnitsConditionst =100μs, T =100°CBootstrap Resistor Peak Power P C P --- 15.0 WBR Peak(Single Pulse) ESR / ERJ seriesHigh side floating supply offset V V - 25 V +0.3VS1,2,3 B1,2,3 B1,2,3voltageV High side floating supply voltage -0.3 600 VB1,2,3Low Side and logic fixed supply V-0.3 20 VCCvoltageLower of V Input voltage LIN, HIN, I (V +15V) or -0.3 VIN Trip SSV +0.3VCC Inverter Section