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IR53H420IRN/a1168avai500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
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IR53H420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packagefeatures a programmable oscillatorwhich functions similar to the CMOS 555 timer. The supply tothe ..
IR53HD420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageFeaturesProduct Summary• • • • • Output power MOSFETs in half-bridge configuration• • • High side ..
IR53HD420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packagefeatures two HEXFETs in a half-bridge con- are matched to simplify use in 50% dutyfiguration with a ..
IR53HD420-P2 ,SELF-OSCILLATING HALF BRIDGEapplications. The device can oper-mum cross-conduction in the half-bridge. Propagation delays ate ..
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IR53H420-IR53HD420
500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
applications. The device can oper-mum cross-conduction in the half-bridge. Propagation delays ate up to the V (max) rating.INTypical ConnectionHV DC Bus IR53H(D)420(-P2)VIN D1External1 6 Fast recovery diode D1 is notVcc VBrequired for HD type2 9R VT INRT3 7C VOTCT4COM TO,LOADCOMIR53H(D)420(-P2)Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All volt-age parameters are absolute voltages referenced to COM, unless stated otherwise. All currents are definedpositive into any lead. The thermal resistance and power dissipation ratings are measured under boardmounted and still air conditions.Symbol Definition Minimum Maximum UnitsV High voltage supply - 0.3 500INV High side floating supply V - 0.3 V + 25B o oVV Half-bridge output -0.3 V + 0.3O INV R voltage - 0.3 V + 0.3RT T ccV C voltage - 0.3 V + 0.3CT T ccI Supply current (note 1) — 25ccmAI R output current - 5 5RT TdV/dt Peak diode recovery — 3.50 V/nsP Package power dissipation @ T ≤ +25°C — 2D AW -P2 — 3Rth Thermal resistance, junction to ambient — 60JA -P2 — 40oC/WRth Thermal resistance, junction to case -P2 — 20JC (heatsink)T Junction temperature -55 150JT Storage temperature -55 150 °CST Lead temperature (soldering, 10 seconds) — 300LNOTE 1:This IC contains a zener clamp structure between V and COM which has a nominal breakdown voltage of 15.6V.CCPlease note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMPspecified in the
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