IR51HD320 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 400 volts.Typical ConnectionUP T O 4 0 0 V DC B U SV INI ..
IR51HD420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageFeatures• • • • • Output Power MOSFETs in half-bridge configurationV (max) 250V (IR51H(D)224)IN ..
IR51HD420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageFeatures• • • • • Output Power MOSFETs in half-bridge configurationV (max) 250V (IR51H(D)224)IN ..
IR51HD420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageElectrical Characteristics Section (NOTE: For new designs, weIR51H(D)224recommend the I ..
IR51HD737 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 300 volts.Typical ConnectionUP T O 3 0 0 V DC B U SVINI ..
IR53H420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packagefeatures a programmable oscillatorwhich functions similar to the CMOS 555 timer. The supply tothe ..
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IR51HD320
SELF-OSCILLATING HALF-BRIDGE
applications. The device canoperate up to 400 volts.Typical ConnectionUP T O 4 0 0 V DC B U SV INIR 51H D 3 201 6V VCC B2 9R VINTRT3 7C VOTCTTO LO A D4CO MCO MIR51HD320Absolute Maximum RatingsAbsolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. Allvoltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still airconditions.ParameterSymbol Definition Min. Max. UnitsV High Voltage Supply -0.3 400INV High Side Floating Supply Absolute Voltage -0.3 425BVO Half-Bridge Output Voltage -0.3 V + 0.3 VINV R Voltage -0.3 V + 0.3RT T CCVCT CT Voltage -0.3 VCC + 0.3I Supply Current (Note 1) --- 25 mACCI R Output Current -5 5RT Tdv/dt Peak Diode Recovery dv/dt --- 4.0 V/nsP --- 2.00 WD Package Power Dissipation @ T ≤ +25ºCARθJA Thermal Resistance, Junction to Ambient --- 60 ºC/WT Junction Temperature -55 150JT Storage Temperature -55 150 ºCST Lead Temperature (Soldering, 10 seconds) --- 300LRecommended Operating ConditionsThe Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be usedwithin the recommended conditions.ParameterSymbol Definition Min. Max. UnitsV High Side Floating Supply Absolute Voltage VO + 10 VO + VB CLAMPV High Voltage Supply --- 400 VINVO Half-Bridge Output Voltage -5 400I Continuous Drain Current (T = 25ºC) --- 0.9 AD A--- 0.6(T = 85ºC)AI Supply Current (Note 1) --- 5mACCT Ambient Temperature -40 125 ºCANote 1: Because of the IR51HD320's application specificity toward off-line supply systems, this IC contains azener clamp structure between the chip V and COM which has a nominal breakdown voltage ofCC15.6V. Therefore, the IC supply voltage is normally derived by current feeding the V leadCC(typically by means of a high value resistor connected between the chip V and the rectified lineCCvoltage and a local decoupling capacitor from V to COM) and allowing the internal zener clampCCcircuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,low impedance power source of greater than V .CLAMPIR51HD320Dynamic
