IR51H737 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 300 volts.Typical ConnectionU P T O 300V D C B U SVINI R ..
IR51HD214 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 250 volts.Typical ConnectionU P T O 250V D C B U SVINI R ..
IR51HD224 ,250V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageElectrical Characteristics Section (NOTE: For new designs, weIR51H(D)224recommend the I ..
IR51HD310 ,400V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageElectrical Characteristics Section2IR51H(D)224IR51H(D)320IR51H(D)420Recommended Operating Condition ..
IR51HD320 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 400 volts.Typical ConnectionUP T O 4 0 0 V DC B U SV INI ..
IR51HD420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageFeatures• • • • • Output Power MOSFETs in half-bridge configurationV (max) 250V (IR51H(D)224)IN ..
IS61C3216-12T , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12TI , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216AL-12TLI , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C512-25J , 64K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C512-35J , 64K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C512-35J , 64K x 8 HIGH-SPEED CMOS STATIC RAM
IR51H737
SELF-OSCILLATING HALF-BRIDGE
applications. The device canoperate up to 300 volts.Typical ConnectionU P T O 300V D C B U SVINI R 51H 7371 6V VCC B2 9R VT INRT3 7C VOTCTTO LO A D4CO MCOMIR51H737Absolute Maximum RatingsAbsolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. Allvoltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still airconditions.ParameterSymbol Definition Min. Max. UnitsV High Voltage Supply -0.3 300INV High Side Floating Supply Absolute Voltage -0.3 325BVO Half-Bridge Output Voltage -0.3 V + 0.3 VINV R Voltage -0.3 V + 0.3RT T CCV C Voltage -0.3 V + 0.3CT T CCI Supply Current (Note 1) --- 25 mACCI R Output Current -5 5RT Tdv/dt Peak Diode Recovery dv/dt --- 3.4 V/nsP --- 2.00 WD Package Power Dissipation @ T ≤ +25ºCAR Thermal Resistance, Junction to Ambient --- 60 ºC/WθJAT Junction Temperature -55 150JT Storage Temperature -55 150 ºCST Lead Temperature (Soldering, 10 seconds) --- 300LRecommended Operating ConditionsThe Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be usedwithin the recommended conditions.ParameterSymbol Definition Min. Max. UnitsVB High Side Floating Supply Absolute Voltage VO + 10 VO + VCLAMPV High Voltage Supply --- 300 VINVO Half-Bridge Output Voltage -5 300I Continuous Drain Current --- 1.3 AD (T = 25ºC)A--- 0.8(T = 85ºC)AI Supply Current (Note 1) --- 5mACCT Ambient Temperature -40 125 ºCANote 1: Because of the IR51H737's application specificity toward off-line supply systems, this IC contains azener clamp structure between the chip V and COM which has a nominal breakdown voltage ofCC15.6V. Therefore, the IC supply voltage is normally derived by current feeding the V leadCC(typically by means of a high value resistor connected between the chip V and the rectified lineCCvoltage and a local decoupling capacitor from V to COM) and allowing the internal zener clampCCcircuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,low impedance power source of greater than V .CLAMPIR51H737Dynamic
