IR51H224 ,250V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageapplications. Thethe half-bridge. Propagation delays for the high and low side device can operate ..
IR51H310 ,400V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packageFeatures• • • • • Output Power MOSFETs in half-bridge configurationV (max) 250V (IR51H(D)224)IN ..
IR51H320 ,SELF-OSCILLATING HALF-BRIDGEapplications. Thethe half-bridge. Propagation delays for the high and low side device can operate ..
IR51H420 ,500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 packagePreliminary Data Sheet No. PD60083-KIR51H(D)224(NOTE: For new designs, weIR51H(D)320recommend the I ..
IR51H737 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 300 volts.Typical ConnectionU P T O 300V D C B U SVINI R ..
IR51HD214 ,SELF-OSCILLATING HALF-BRIDGEapplications. The device canoperate up to 250 volts.Typical ConnectionU P T O 250V D C B U SVINI R ..
IS61C3216-12T , 32K x 16 HIGH-SPEED CMOS STATIC RAM
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IR51H224-IR51H420-IR51HD224-IR51HD420
250V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
applications. Thethe half-bridge. Propagation delays for the high and low side device can operate up to 500 volts.Typical ConnectionDC BusVIN D1IR51H(D)XXXExternalFast recovery diode D1 is1 6Vcc VBnot required for HD type2 9R VT INRT3 7C VOTCT4COM TO,LOADCOM (NOTE: For new designs, weIR51H(D)224recommend the IR53H(D)420-P)IR51H(D)320IR51H(D)420Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. Allvoltage parameters are absolute voltages referenced to COM, all currents are defined positive into anylead. The thermal resistance and power dissipation ratings are measured under board mounted andstill air conditions.Symbol Definition Minimum Maximum UnitsV High voltage supply -224 - 0.3 250IN-320 - 0.3 400-420 - 0.3 500V High side floating supply Vo - 0.3 Vo +2.5 VBV Half-bridge output -0.3 V + 0.3O INV R voltage - 0.3 V + 0.3RT T ccV C voltage - 0.3 V + 0.3CT T ccI Supply current (note 1) — 25ccmAI R output current - 5 5RT TdV/dt Peak diode recovery — 3.5 V/nsP Package power dissipation @ T ≤ +25°C — 2.00 WD AoRth Thermal resistance, junction to ambient — 60 C/WJAT Junction temperature -55 150JoCT Storage temperature -55 150ST Lead temperature (soldering, 10 seconds) — 300LNOTE 1:This IC contains a zener clamp structure between V and COM which has a nominal breakdown voltage of 15.6V.CCPlease note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMPspecified in the
