IR3507MPBF ,A full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs.ELECTRICAL CHARACTERISTICS The
IR3507MTRPBF ,A full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs.FEATURES IR3507 PHASE IC • Power State Indicator (PSI) interface provides the capability to maximiz ..
IR3507ZM ,A full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs.ELECTRICAL CHARACTERISTICS The
IR3507ZMTRPBF ,A full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs.FEATURES IR3507Z PHASE IC • Power State Indicator (PSI) interface provides the capability to maximi ..
IR3507ZMTRPBF ,A full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. IR3507Z DATA SHEET TM XPHASE3 PHASE IC DESCRIPTION TMThe IR3507Z Phase IC combined with an I ..
IR3508MTRPBF ,A full featured and flexible way to implement a power solution for the latest high performance CPUs and ASICs.FEATURES IR3508 PHASE IC x Power State Indicator (PSI) interface provides the capability to maximiz ..
IS42S16160D-7T , 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-7TI , 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160G-7TLI , 32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
IS42S16320B-6BL , 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-6TL , 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IS42S16320B-6TLI , 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
IR3507M-IR3507MPBF-IR3507MTRPBF
A full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs.
International
NOT RECOMMENDED FOR NEW DESIGNS
TOR Recti fi er REPLACEMENT PRODUCT - IR3507ZPBF I R3 50 7 P b F
DATA SH EET
XPHASE3TM PHASE IC
DESCRIPTION
The IR3507 Phase IC combined with an IR XPhase3TM Control IC provides a full featured and flexible way to
implement power solutions for the latest high performance CPUs and ASICs. The "Control" IC provides
overall system control and interfaces with any number of "Phase" ICs which each drive and monitor a single
phase of a multiphase converter. The XPhase3TM architecture results in a power supply that is smaller, less
expensive, and easier to design while providing higher efficiency than conventional approaches.
FEATURES IR3507 PHASE IC
7V/2A gate drivers (4A
RoHS compliant
APPLICATION CIRCUIT
GATEL sink current)
Converter output voltage up to 5.1 V (Limited to VCCL-1.4V)
Loss-less inductor current sensing
Feed-forward voltage mode control
Integrated boot-strap synchronous PFET
Only four external components per phase
3 wire analog bus connects Control and Phase ICs (VID, Error Amp, IOUT)
3 wire digital bus for accurate daisy-chain phase timing control without external components
Anti-bias circuitry prevents excessive sag in output voltage during PSI de-assertion
PSI input is ignored during power up
Debugging function isolates phase IC from the converter
Self-calibration of PWM ramp, current sense amplifier, and current share amplifier
Single-wire bidirectional average current sharing
Small thermally enhanced 20L 4 X 4mm MLPQ package
Power State Indicator (PSI) interface provides the capability to maximize the efficiency at light loads.
12V|:>
EAIN =>
CD 07 W Ps ©
ml e '" '" N-
a hi g g y RCS CCS
IOUT D—1 IOUT sw 15 W K ll
PSI D—Z PSI GATEH 14 l VOUT+
DACIN =-3 DACIN IR3507 BOOST 13 l l C
<:0--'- LGND VCCL 12 CBST
5 PHSIN 's 4 NC _11
Z 0 Lu -
col h on ' g VOUT-
PHSlN |:>— <:|
PHSOUT[:> : l =
CLKIN D CVCCL
VCCL|:>
Figure 1 Application Circuit
Page 1 of 19 IR Confidential April 2, 2009
http://www.loq
In te m C) ti O n al NOT RECOMMENDED FOR NEW DESIGNS
TOR Rectifier REPLACEMENT PRODUCT - IR3507ZPBF IR3507PbF
ORDERING INFORMATION
Part Number Package Order Quantity
|R3507MTRPBF 20 Lead MLPQ 3000 per reel
(4 x 4 mm body)
* |R3507MPBF 20 Lead MLPQ 100 piece strips
(4 x 4 mm body)
* Samples only
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only and functional operation of the device at these or any other
conditions beyond those indicated in the operational sections of the specifications are not implied.
Operating Junction Temperature............ ..... 0 to 150°C
Storage Temperature Range... ... ... ... ... ... ... .-65°C to 150°C
ESD Rating ............................................. HBM Class 1C JEDEC Standard
MSL Rating ............................................. 2
Reflow Temperature .................................. 260°C
PIN g PIN NAME VMAX VMIN |SOURCE ISINK
1 IOUT 8V -0.3V 1mA 1mA
2 PSI 8V -0.3V 1mA 1mA
3 DACIN 3.3V -0.3V 1mA 1mA
4 LGND n/a n/a n/a n/a
5 PHSIN 8V -0.3V 1mA 1mA
6 NC n/a n/a n/a n/a
7 PHSOUT 8V -0.3V 2mA 2mA
8 CLKIN 8V -0.3V 1mA 1mA
9 PGND 0.3V -0.3V 5A for 100ns, n/a
200mA DC
10 GATEL 8V -O.3V DC, -5V for 5A for 100ns, 5A for 100ns,
100ns 200mA DC 200mA DC
11 NC n/a n/a n/a n/a
12 VCCL 8V -0.3V n/a 5A for 100ns,
200mA DC
13 BOOST 40V -0.3V IA for 100ns, 3A for 100ns,
100mA DC 100mA DC
14 GATEH 40V -0.3V DC, -5V for 3A for 100ns, 3A for 100ns,
100ns 100mA DC 100mA DC
15 SW 34V -0.3V DC, -5V for 3A for 100ns, n/a
100ns 100mA DC
16 VCC 34V -0.3V n/a 10mA
17 CSIN+ 8V -0.3V 1mA 1mA
18 CSIN- 8V -0.3V 1mA 1mA
19 EAIN 8V -0.3V 1mA 1mA
20 NC n/a n/a n/a n/a
1. Maximum GATEH - SW = 8V
2. Maximum BOOST - GATEH = 8V
Page 2 of 19 IR Confidential April 2, 2009
