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IS42S16160D-75ETLI , 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-75ETLI , 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
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IR3506M-IR3506MTRPBF
The IR3506 Phase IC combined with IR3522 xPHASE3 Control ICs implements a full featured DDR3 power solution.
International
TOR Rectifier IR3506
DATA SHEET
XPHASE3TM DDR & VTT PHASE IC
DESCRIPTION
The IR3506 Phase IC combined with IR3522 XPHASE3TM Control ICs implements a full featured DDR3 power
solution. The IR3522 provides control functions for both the VDDR and VTT power rails and interfaces with any
number of IR3506 Phase ICs each driving and monitoring a single phase to power any number of DDR3
DIMMs. The xPHASE3TM architecture delivers a power supply that is smaller, more flexible, and easier to
design while providing higher efficiency than conventional approaches.
FEATURES
Power State Indicator (PSI) interface provides the capability to maximize efficiency at light loads
Anti-bias circuitry
7V/2A gate drivers (4A GATEL sink current)
Support loss-less inductor current sensing
Phase delay DFF bypassed during PSI assertion mode to improve output ripple performance
Over-current protection during PSI assertion mode operation
Integrated boot-strap synchronous PFET
Only four IC related external components per phase
3 wire analog bus connects Control and Phase ICs (VDAC, Error Amp, IOUT)
3 wire digital bus for accurate daisy-chain phase timing control without external components
Debugging function isolates phase IC from the converter
Self-calibration of PWM ramp, current sense amplifier, and current share amplifier
Single-wire bidirectional average current sharing
Soft-stop turn-off to insure VDDR and Vtt tracking
Small thermally enhanced 16L 3 x 3mm MLPQ package
RoHS Compliant
APPLICATION CIRCUIT
12V1:>
59' ",'2 ' C'
E ck Q U)
=- LI a 5 I
1 O O 12 U11
' [CV-' IO SW __
7 Wire 2 IR3506 11 I ----CIN
Bus to =-'' DACIN PHASE GATEH CBST L
Control _ LGND IC BOOST 10 ll fN-hf'N"h <:l
IC 4 9 VOUT+
=-'' PHSIN 's -l VCCL U12
8 E fl E E ---- COUT
I -l (D <
I 0 I 0
ml no rx t <:[ l/OUT-
|CIVCCL N
VCCL |:>
Page1 of 21 V3.02
International
IEBR Rectifier
IR3506
ORDERING INFORMATION
Part Number
Package
Order Quantity
IR3506MTRPBF
16 Lead MLPQ
(3 x 3 mm body)
3000 per reel
* lR3506MPBF
16 Lead MLPQ
(3 x 3 mm body)
100 piece strips
* Samples only
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications are not implied.
Operating Junction Temperature ................. 0°C to 150°C
Storage Temperature Range ...................... -65°C to 150°C
MSL Rating ............................................. 2
Reflow Temperature .................................. 260°C
PIN ft PIN NAME VMAX VMIN ISOURCE ISINK
1 IOUT 8V -O.3V 1mA 1mA
2 DACIN 3.3V -O.3V 1mA 1mA
3 LGND n/a n/a n/a n/a
4 PHSIN 8V -O.3V 1mA 1mA
5 PHSOUT 8V -0.3V 2mA 2mA
6 CLKIN 8V -0.31/ 1mA 1mA
7 PGND 0.3V -0.3V 5A for 100ns, n/a
200mA DC
8 GATEL 8V -0.3V DC, -5V for 5A for 100ns, 5A for 100ns,
100ns 200mA DC 200mA DC
9 VCCL 8V -0.3V n/a 5A for 100ns,
200mA DC
10 BOOST 40V -0.31/ 1A for 100ns, 3A for 100ns,
100mA DC 100mA DC
11 GATEH 40V -O.3V DC, -5V for 3A for 100ns, 3A for 100ns,
100ns 100mA DC 100mA DC
12 SW 34V -0.3V DC, -5V for 3A for 100ns, n/a
100ns 100mA DC
13 PSI 8V -O.3V 1mA 1mA
14 CSIN+ 8V -0.31/ 1mA 1mA
15 CSIN- 8V -O.3V 1mA 1mA
16 EAIN 8V -O.3V 1mA 1mA
1. Maximum GATEH - SW = 8V
2. Maximum BOOST - GATEH = 8V
Page 2 of 21
