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IR3312S
Fully Protected 4 Terminal Programmable Current Sensing High Side Switch
Data Sheet No.PD60211 rev.D
International
15.21% Rectifier IR3312(S)
PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Features Product Summary
. Load current feedback
. Programmable over current shutdown Rds(0n) 20mn
q Active clam
o E.S.D protegtion Ifaop. 6 to 28V
. Input referenced to Vcc Current ratio 2800
q Over temperatue shutdown
. Reverse battery protection I shutd own 3 to 30 A
Description Active clamp 35V
The IR 3312(S) is a Fully Protected 4 terminal high side switch.
The input signal is referenced to Vcc. When the inputvoltage Load Dump 40V
Vcc - Vin is higher than the specified Vih threshold, the output
power MOSFET is turned-on. When Vcc - Vin is lower than Package
the specified Vil threshold, the output MOSFET is turned-off.
A sense current proportional to the current in the power Mosfet
is sourced to the Ifb pin. Over-current shutdown occurs when
Wb - Vin > 4.5 V. The current shutdown threshold is adjusted
by selecting the proper leb. Either over-current and over-tem-
perature latches off the switch. The device is reset by pulling
the input pin high. Other integrated protections ( ESD, reverse 2
battery, active clamp ) make the IR3312(S) very rugged and 5 Ligistgzzo D "1,(i15l220)
suitable for the automotive environment.
Typical Connection
IN IR 3312 Battery -
Ifb OUT
”-77 - Ground
1
IR3312(S) International
TOR Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Vcc lead. (TAmbient = 25°C unless otherwise specified).
Symbol Parameter Min. Max. Units
Vcc - Vin max Maximum input voltage -16 50
Vcc-Vlfb max Maximum Ifb voltage -0.3 50 v
Vcc - Vout max. Maximum outputvoltage -0.3 33
Ids cont. Diode max. permanent current (Rth = 60 °C/W) (1) - 2.8
Ids1 cont Diode max. permanent current (Rth = 5 °C/W) (1) - 25 A
Ids pulsed Diode max. pulsed current (1) - 100
ESD 1 Electrostatic discharge ( human body model )C=100pF, R=1500§2, - 4
ESD 2 Electrostatic discharge (machine mode|)C=200pF,R=OS2, L--10WH - 0.5 kV
Pd Power dissipation ( Rth = 60 °C/W ) - 2 W
TJ max. Max. storage and junction temperature -40 150 "C
Min Rlib Minimum resistor on the Ifb pin 0.3 - k9
Itb max Max. Ifb current -20 +20 mA
Thermal Characteristics
Symbol Parameter Typ. Max. Units
Rth 1 Thermal resistance junction to Ambient - T0220 60 -
Rth 2 Thermal resistance junction to case - T0220 0.7 -
Rm 1 Thermal resistance with standard footprint - SMD220 60 - °C/W
Rth 2 Thermal resistance with 1" square footprint - SMD220 35 -
Rth 3 Thermal resistancejunction to case - SMD220 0.7 -
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vcc -Vin Continuous input voltage 6 28
Vcc -Vlfb Continuous Ifb pin voltage 0.3 28 V
Vcc Supply to power ground voltage 6 28
lout Continuous output current ( Rth/amb < 5 "C/W, Tj = 125°C) - 14
lout 85°C amb. Continuous output current ( Rth/amb < 60 ''C/W, Tj = 125°C) - 3.9 A
leb Ifb resistor to program Isd and scale (2 & 3) 0.5 3.5 k!)
Pulse min. Minimum turn-on pulse width 1 - ms
Fmax Maximum operating frequency - 500
Fmax Prot. Maximum frequency with protections activated - 200 Hz
1) Limited byjunction temperature. Pulsed current is also limited by wiring
2) <500 Ohm or shorting Ifb to gnd may damage the part with Isd around 37A
3) >5000 Ohm or leaving Ifb open will shutdown the part. No currentwill flow in the load.
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