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IR3103
Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 180W Motor Drive applications
PD-96992 Rev.B
international
. . IR3103
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and Integrated Driver 0.7 5 A, 500V
Description
The IR3103 is a gate driver IC integrated with a half bridge FredFET designed for motor drive applications
up to 180W (heatsink-Iess). The sleek and compact single-in-Iine package is optimized for electronic motor
control in appliance applications such as fans and compressors for refrigerators. The IR3103 offers an
extremely compact, high performance half-bridge inverter in a single isolated package for two-phase and
three-phase motor drivers.
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFETO power FredFET
technology (HEXFET6 MOSFET with ultra-fast recovery body diode characteristics), enable efficient and
rugged single package construction. Propagation delays for the high and low side power FredFETs are
matched thanks to advanced IC technology.
Features
q Output Power FredFET in Half-Bridge Configuration
. High Side Gate Drive Designed for Bootstrap Operation
. Bootstrap Diode Integrated into Package
. Lower Power Level-Shifting Circuit
q Lower di/dt Gate Drive for Better Noise Immunity
. Excellent Latch Immunity on All Inputs and Outputs
. ESD Protection on All Leads
. Isolation 1500 VRMS min,
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. Power dissipation is measured under board mounted and still air
conditions.
Parameter Description Max. Value Units
Vos Drain to Source Blocking Voltage 500
l/oo DC Bus Supply Voltage (No Switching Operation) 500 V
lo (TA=25°C) Continuous Output Current (1) 0.7 A
lo (TA=55°C) Continuous Output Current (1) 0.6 A
lo (TA=25°C) Pulsed Output Current (2) 2,7 A
Pd Package Power Dissipation OTAS 55°C (3) 1.4 W
V150 Isolation Voltage (1min) 1500 VRMS
To Junction Temperature (Power MOSFET) -40 to +150 °C
Ts Storage Temperature -40 to +150 °C
TL Lead Temperature (soldering, 10 seconds) 300 °C
Ts Storage Temperature -40 to +150 °C
Note 1: See figure 3, fPWM=16kHz
Note 2: Tp=100ms, other conditions as per Figure 3, prM=16kHz
Note 3: Single Device Operating
1
IR3103
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Absolute Maximum Ratings (Continued)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM.
Symbol Parameter Min Max Units Conditions
Bootstrap Continuous Diode
I - . T = 1 o , T = o
BDF Forward Current 0 3 A J 50 C A 55 C
High Side Floating Supply
B Absolute Voltage 0 3 525 V
Vo High Side Floating Supply Offset VB - 25 VB +0.3 V
Voltage
Vcc Low Side and Logic Fixed Supply -0.3 25 V
Voltage
VIN Input Voltage Go Hm Vss-0.3 Vcc+0.3v V
Vss Logic Ground Vcc-25 Vcc+0.3v V
Recommended Operating Conditions Driver Function
For proper operation the device should be used within the recommended conditions. All voltages are absolute
referenced to COM. The Vs and Vo offset are tested with all supplies biased at 15V differential.
Symbol Definition Min Max Units
VB High Side Floating Supply Absolute Voltage Vo+1O Vo+20 V
l/oo High Voltage Supply Note 4 400 V
Vcc Low Side and Logic Fixed Supply Voltage 10 20 V
VIN Logic Input Voltage Vss Vcc V
Vss Logic Ground -5 5 V
Note 4: Logic operation for Vo of -5 to +500V. Logic state held for Vo of -5V to A/so, (Please refer to the Design Tip
DT97-3 for more details).
