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IR25XB02H-IR25XB04H-IR25XB06H
200V Bridge in a IR25XB package
International
1OR Rectifier
Bulletin 127127 rev.D 06/03
IR25XB..H
25.0 Amps Single Phase Full Wave
Features
El Diode chips are glass passivated
III Suitable for Universal hole mounting
III Easy to assemble & install on P.C.B.
III High Surge Current Capability
I: High Isolation between terminals and molded case (2500 V
I: High Thermal Conductivity
Ill Lead free terminals solderable as per MIL-STD-750, Method 2026
El High Temperature soldering guaranteed at 260°C/ 8-10secs
u ULE160375 approved N
Description
These IRXB..H Series of Single Phase Bridges
consist of four glass passivated silicon junction
connected as a Full Wave Bridge. These four
junctions are encapsulated by plastic molding
technique. These Bridges are mainly used in Switch
Mode power supply, Induction cooker, Airconditioner,
Washing Machine and Microwave oven.
Major Ratings and Characteristics
Bridge Rectifier
low) = 25A
vRRM = 200/ 800V
Parameters IR25XB..H Units
IO 25 A
@Tc 100 ''c
IFSM @50Hz 400 A
@60Hz 420 A
|2t @50Hz 800 A25
@60Hz 732 A25
IR25XB..H
VRRM range 200to800 V
T, -55tol50 oc
1
International
IR25XB..H
Bulletin 127127 rev. D 06/03 TOR Redlflef
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM , max repetitive VRMS, max RMS VRSM , max non-repetitive |RRM max. |RRM max.
Type number Code peak rev. voltage voltage peak rev. voltage @ rated VRRM @ rated VRRM
TJ=TJmax. TJ=TJmax. TJ=TJmax. TJ=25°C To-- 150°C
V V V pA pA
IR25XB..H 02 200 140 275 5 250
04 400 280 500 5 250
06 600 420 725 5 250
08 800 560 900 5 250
Forward Conduction
Parameters IR25XB..H Unit Conditions
lo Maximum DC output current 25 A TC= 100°C, Resistive& inductiveload
IFSM Maximum peak, one-cycle 400 t=10ms
non-repetitive surge current,
following any rated load condition 420 t =8.3ms T, =150°C
and with rated VRRM reapplied
Pt Maximum Pt for fusing, 800 A25 t=10ms
initial To=Tpnax 732 t=8.3ms
VFM Maximum peakforward voltage 0.975 V TJ=25°C,IFM=12.5A
per diode
Ira, Typicalpeakreverseleakage 5.0 pA Tu-- 25°C. 100% VRRM
current per diode 250 TJ=150°C, 100%VRRM
VRRM Maximumrepetitive peak 200 to 800 V
reverse voltage range
Thermal and Mechanical Specifications
Parameters IR25XB..H Unit Conditions
T J Operating and storage -55 to 150 (
Tstg temperature range
RthJC Max.thermalresistance 1.0 °C/W At DC rated current (1)
junction to case
RWA Thermal resistance, 22 ''C/W At DC rated current (2)
junction to ambient
W Approximateweight 7.4 (0.26) g (oz)
T Mounting Torque 1.0 Nm Bridgeto Heatsink
9.0 Lb.in
Note (1 ): Bridge mounted on Aluminun heatsink, use silicon thermal compound for heat transfer and boltdown
using 3mm screw
(2): Bridges mounted in free airwithout heatsink.
