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IR2304-IR2304S
High and Low Side Driver, SoftTurn-On, Noninverting Inputs in a 8-pin DIP package
International
152R Rectifier
Data Sheet No. PD60200 revB
IR2304(S) & (PbF)
Featu res
q Floating channel designed for bootstrap operation
to +6OOV. Tolerant to negative transient voltage
dV/dt immune
q Gate drive supply range from 10 to 20V
q Under voltage lockout for both channels
q 3.3V, 5V, and 15V input logic input compatible
q Cross-conduction prevention logic
q Matched propagation delay for both channels
q Lower di/dt gate driver for better noise immunity
q Internal 100ns dead-time
q Output in phase with input
. Available in Lead-Free
Description
The IR2304(S) are a high voltage, high speed
power MOSFET and IGBT driver with inde-
pendent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies
2106/2301/2108/2109I2302/2304 Feature Comparison
HALF-BRIDGE DRIVER
Product Summary
VOFFSET 600V max.
Io+/- (min) 60 mA/130 mA
VOUT 1O - 20V
Delay Matching 50 ns
Internal deadtime 100 ns
ton/off (typ.) 220/220 ns
Package
M1i'tt''s's
L’ V 8 Lead SOIC
1riiiii''"t')
8-Lead PDIP
enable ruggedized monolithic construction. Cross-
The logic input is compatible with standard Input conduction . .
CMOS or LSTTL output, down to 3.3V logic. Part logic prevehtion Dead-Time Ground Pins
The output driver features a high pulse cur- 2106/2301 loaic COM
rent buffer stage designed for minimum driver 21064 HIN/LIN no none N/SS/COM
cross-conduction. The floating channel can be 2108 mm yes Internal 540ns COM
used to drive an N-channel power MOSFET 21084 Programmable 0.54~5us VSS/COM
or IGBT in the high side configuration which 210912302 |N/S_D yes Internal540ns COM
operates up to 600 volts 21094 Programmable 0S4-5ys VSS/COM
. 2304 H|N/LIN yes Internal 100ns COM
Block Diagram uitti)OV
VCCC F,
U vv,il:_rC"
HIN LIN VB A l Cr, T--,
LIN HIN HO /\
;; VCC VS 1lg,
IR2304 c--
www.irf,com 1
lR2304(S)&(PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
International
TOR Rectifier
Symbol Definition Min. Max. Units
Vs High side offset voltage VB - 25 VB + 0.3
VB High side floating supply voltage -0.3 625
VH0 High side floating output voltage HO Vs - 0.3 VB + 0.3
Vcc Low side and logic Fixed supply voltage -0.3 25 V
VLo Low side output voltage LO -O.3 VCC + 0.3
VIN Logic input voltage (HIN, LIN) -0.3 Vcc + 0.3
Com Logic ground Vcc -25 Vcc + 0.3
st/dt Allowable offset voltage SLEW RATE - 50 V/ns
PD Package power dissipation @ TA S +25°C 8-Lead SOIC - 0.625 W
8-Lead PDIP - 1.0
RthJA Thermal resistance, junction to ambient 8-Lead SOIC - 200 Ct
8-Lead PDIP - 125 C/W
TJ Junction temperature - 150
Ts Storage temperature -50 150 "C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The Vs offset rating is tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side floating supply voltage Vs + 10 vs + 20
Vs High side floating supply offset voltage Note 1 600
VH0 High side (HO) output voltage Vs VB
VLo Low side (LO) output voltage COM Vcc V
VIN Logic input voltage (HIN, LIN) COM VCC
Vcc Low side supply voltage 10 20
TA Ambient temperature -40 125 "C
Note I: Logic operational for Vs of COM -5 to COM +600V. Logic state held for Vs of COM -5V to COM A/BS.
