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IR2301STRPBF
High and Low Side Driver, SoftTurn-On, Noninverting Inputs in a 8-Lead package
International
19R Rectifier
Data Sheet No. PD60201 Rev.D
IR2301(S) &(PbF)
Features
q Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
8 Lead PDIP
q Gate drive supply range from 5 to 20V IR2301
o Undervoltage lockout for both channels
q 3.3V, 5V and 15V input logic compatible
q Matched propagation delay for both channels
q Logic and power ground +/- 5V offset. ' ,
q Lower di/dt gate driver for better noise immunity / ":fisfii'i,
o Outputs in phase with inputs
q Also available LEAD-FREE (PbF)
Description
The IR2301(S) are high voltage, high speed
power MOSFET and IGBT drivers with indepen-
dent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized mono-
lithic construction. The logic input is compatible
with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel
HIGH AND LOW SIDE DRIVER
Packages
8Lead SOIC Tre'. LL
IR2301S 1, '
2106/2301//2108/l2109/2302/2304 Feature Comparison
Cross.
Part lnptit conduction Dead-Time Ground Pins
logic prevention
2106/2301 COM
21064 HIN/LIN no none VSS/COM
2108 - Internal 540ns COM
21084 HIN/LIN yes Programmable 0.54~5us VSS/COM
210912302 - Internal 540ns COM
21094 IN/SD yes Programmable 0.54~5 [ts VSS/COM
2304 HIN/LIN yes Internal 100ns COM
can be used to drive an N-channel power MOSFET or IGBT in the high side conhguration which operates up to
600 volts.
TypicalConnection
(Refer to Lead Vcc
Assignments for
correct pin con-
figuration). This/
T h e s e
d i a g r a m ( s )
show electrical
C o n n e c t i o n s
only. Please re-
fer to our Appli-
cation Notes
and DesignTips
for proper circuit
board layout.
up to 600V
IR2301
IR2301(S)&(PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
International
TOR Rectifier
Symbol Definition Min. Max. Units
VB High side floating absolute voltage -0.3 625
Vs High side floating supply offset voltage VB - 25 V3 + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3
Vcc Low side and logic Ftxed supply voltage -O.3 25 V
VLO Low side output voltage -0.3 Vcc + 0.3
VIN Logic input voltage COM - 0.3 Vcc + 0.3
st/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA s +25°C (8 lead PDIP) - 1.0
(8 lead SOIC) - 0.625 W
RthJA Thermal resistance, junction to ambient (8 lead PDIP) - 125
(8 lead SOIC) - 200 °C/W
TJ Junction temperature - 150
Ts Storage temperature -50 150 °C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The Vs offset rating is tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage Vs + 5 Vs + 20
Vs High side floating supply offset voltage Note 1 600
VH0 High side floating output voltage Vs V5
Vcc Low side and logic fixed supply voltage 5 20 V
VLo Low side output voltage 0 Vcc
VIN Logic input voltage COM Vcc
TA Ambient temperature -40 150 °C
Note 1: Logic operational for Vs of -5 to +600V. Logic state held for Vs of -5V to -VBs. (Please refer to the Design Tip
DT97-3 for more details).
