IR2156STRPBF ,Ballast Control, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-lead SOIC Narrow packagefeatures such as protection from failure of a lamp to strike, filament failures, as well as an auto ..
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IR2156STRPBF
Ballast Control, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-lead SOIC Narrow package
International
TOR Rectifier IR2156(S)PbF
BALLAST CONTROL IC
Features .
II Ballast control and half bridge driver in one IC , BJTEESELeViiZd Slim
II Programmable preheatfrequency n . - . g .
II Programmable preheat time Shutdown pm with hys.teresit.
n Internal ignition ramp ll Internal 15.6V zener clamp diode on Vcc
II Programmable oVer-Currentthreshold l .Mifr.op.owers..tartup.(15/1 HA) .
n Programmable run frequency ll Latch immunity and ESD protection
Description Packages
The IR2156 incorporates a high voltage half-
bridge gate driver with a programmable oscillator and _ “2
state diagram to form a complete ballast control IC. 9‘3" , .
The IR2156 features include programmable preheat IF;- 2 . f
and run frequencies, programmable preheat time, "(If
programmable dead-time, and programmable over- 'h
current protection. Comprehensive protection
features such as protection from failure of a lamp to IR2156SPBF IR2156PBF
strike, filament failures, as well as an automatic SOICN14 PDIP14
restart function, have been included in the design.
Application Diagram
VBus(+) C)
LRES CDC
F-T CRES
R2 DCP1
VBus(-) O tt l
International
TOR Rectifier
IR2156(S)PbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal
Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 625
VS High side floating supply offset voltage VB - 25 VB + 0.3 V
VHO High side floating output voltage Vs - 0.3 VB + 0.3
VLO Low side output voltage -0.3 VCC + 0.3
mm $312“ZQSJLZYSE'WeefiiEELA‘Sfs‘iéier'ifi.i£'r%fi233 -500 500 mA
VDC VDC pin voltage -O.3 VCC+0.3
VCT CT pin voltage -O.3 VCC+0.3 V
VCPH CPH pin voltage -0.3 VCC+0.3
ICPH CPH pin current -5 5
IRPH RPH pin current -5 5 mA
VRPH RPH pin voltage -0.3 VCC+0.3 V
IRT RT pin current -5 5 mA
VRT RT pin voltage -O.3 VCC+0.3 V
VCS Current sense pin voltage -O.3 5.5
ICS Current sense pin current -5
ISD Shutdown pin current -5 mA
ICC Supply current (Note 1) -20 20
dV/dt Allowable offset voltage slew rate -50 50 V/ns
PD Package power dissipation @ TA 3 +25°C (14-Pin DIP) - 1.80 W
PD = (TJMAx-TA)/R0JA (14-Pin SOIC) - 1.40
ROJA Thermal resistance, junction to ambient (.11-.Pir] DIP) - 70 "CA/V
(14-Pin SOIC) - 82
TJ Junction temperature -55 150
TS Storage temperature -55 150 °C
TL Lead temperature (soldering, 10 seconds) - 300
Note I: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than
the VCLAMP specified in the Electrical Characteristics section.
