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IR2155PBF
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
. Data Sheet No. PD60029 revJ
International IR215581(PbF)
TOR Recti fl er (NOTE: For new designs, we recommend IR's new products
IR2153 and IR21531)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features P d t S
o Floating channel designed for bootstrap operation ro UC ummary
Fully operational to +600V VOFFSET 600V max.
Tolerant to negative transient voltage
dV/dt immune Duty Cycle 50%
o Undervoltage lockout
o Programmable oscillator frequency ko-H- 210 mA / 420 mA
f_1.4><(RT+150§2)>
o Matched propagation delay for both channels Deadtime (typ.) 1.2 ps
o Micropower supply startup current of 125 pA typ.
q Low side output in phase with RT
q Available in Lead-Free Package
Description
The IR2155 is a high voltage, high speed, self-
oscillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technolo-
gies enable ruggedized monolithic construction.
The front end features a programmable oscillator
which is similar to the 555 timer. The output drivers
feature a high pulse current buffer stage and an in-
ternal deadtime designed for minimum driver cross- 8 Lead PDIP
conduction. Propagation delays for the two
channels are matched to simplify use in 50% duty . . . .
cycle applications. The floating channel can be MOSFET or IGBT In the high side configuration that
used to drive an N-channel power operates off a high voltage rail up to 600 volts.
Typical Connection
up to 600V
(Refer to Lead Assignment diagram for correct pin configuration)
1
IR2155&(PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
International
TDR Rectifier
Parameter Value
Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -O.3 625
Vs High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
VH0 High Side Floating Output Voltage Vs - 0.3 VB + 0.3
VLo Low Side Output Voltage -0.3 Vcc + 0.3 V
VRT RT Voltage -0.3 VCC + 0.3
VCT CT Voltage -0.3 VCC + 0.3
ICC Supply Current (Note 1) - 25 mA
IRT RT Output Current -5 5
st/dt Allowable Offset Supply Voltage Transient - 50 V/ns
PD Package Power Dissipation @ TA s +25°C (8 Lead DIP) - 1.0
(8 Lead SOIC) - 0.625 W
ReJA Thermal Resistance, Junction to Ambient (8 Lead DIP) - 125 °C/W
(8 Lead SOIC) - 200
T: Junction Temperature - 150
Ts Storage Temperature -55 150 "C
TL Lead Temperature (Soldering, 10 seconds) - 300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The Vs offset rating is tested with all supplies biased at 15V differential.
Parameter Value
Symbol Definition Min. Max. Units
VB High Side Floating Supply Absolute Voltage Vs + 10 Vs + 20
Vs High Side Floating Supply Offset Voltage - 600 V
VH0 High Side Floating Output Voltage Vs V3
VLo Low Side Output Voltage 0 Vcc
ICC Supply Current (Note 1) - 5 mA
TA Ambient Temperature -40 125 "C
Note 1: Because of the IR2155's application specificity toward off-Iine supply systems, this IC contains a zener clamp
structure between the chip Vcc and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip Vcc and the rectified line voltage and a local decoupling capacitor from
VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than VCLAMP.
2
