3 Phase Driver, Inverting Input, 2.5us Deadtime in a 28-pin DIP package The IR2130 is a high voltage, high-speed power MOSFET and IGBT driver manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features of the IR2130:
### **Specifications:**
- **Manufacturer:** International Rectifier (IR)
- **Type:** High-voltage, high-speed MOSFET/IGBT driver
- **Output Current:** 200mA (source/sink)
- **Supply Voltage (VCC):** 10V to 20V
- **Logic Input Voltage (VIN):** 3.3V to 20V (TTL/CMOS compatible)
- **Floating Supply Voltage (VB):** Up to 600V
- **Operating Temperature Range:** -40°C to +125°C
- **Propagation Delay:** 120ns (typical)
- **Dead Time (Internal):** 1.2µs (typical)
- **Package:** 28-lead PDIP, SOIC
### **Descriptions:**
- The IR2130 is designed to drive high-side and low-side N-channel power MOSFETs or IGBTs in a three-phase bridge configuration.
- It integrates three independent high-side and low-side drivers with a high-voltage level-shifting circuit.
- The device features built-in dead-time generation to prevent shoot-through in half-bridge applications.
- It includes under-voltage lockout (UVLO) protection for all channels.
### **Features:**
- **High Voltage Operation:** Supports floating high-side drivers up to 600V.
- **Integrated Dead-Time:** Prevents cross-conduction in half-bridge configurations.
- **CMOS/TTL Compatible Inputs:** Works with 3.3V to 20V logic levels.
- **Under-Voltage Lockout (UVLO):** Protects against insufficient gate drive voltage.
- **Fault Protection:** Shutdown logic for overcurrent or fault conditions.
- **Low Propagation Delays:** Ensures fast switching performance.
- **Cross-Conduction Suppression:** Prevents simultaneous high-side and low-side conduction.
These details are based on the manufacturer's datasheet for the IR2130.
