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IR2111SPBF from IR,International Rectifier

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IR2111SPBF

Manufacturer: IR

Half Bridge Driver, Fixed 650ns Deadtime in a 8-lead SOIC package

Partnumber Manufacturer Quantity Availability
IR2111SPBF IR 9629 In Stock

Description and Introduction

Half Bridge Driver, Fixed 650ns Deadtime in a 8-lead SOIC package The IR2111SPBF is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies. Here are the key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Output Configuration:** High and Low Side  
- **Output Current (Source/Sink):** 2.0A / 2.0A  
- **Rise Time (Typical):** 120ns  
- **Fall Time (Typical):** 90ns  
- **Supply Voltage (VDD):** 10V to 20V  
- **Logic Voltage (VSS):** -0.5V to 5.5V  
- **High-Side Voltage (Max):** 600V  
- **Propagation Delay (Typical):** 180ns  
- **Operating Temperature Range:** -40°C to +125°C  
- **Package:** 16-Pin SOIC  

### **Descriptions:**  
The IR2111SPBF is a monolithic driver designed to control high-speed power MOSFETs and IGBTs. It integrates independent high-side and low-side output channels with high noise immunity and fast switching capabilities.  

### **Features:**  
- **Floating Channel Design:** Enables high-side drive up to 600V.  
- **CMOS Schmitt-Triggered Inputs:** Improved noise immunity.  
- **Matched Propagation Delay:** Ensures precise timing for high and low-side switches.  
- **Undervoltage Lockout (UVLO):** Protects against insufficient supply voltage.  
- **Cross-Conduction Prevention:** Internal dead-time control.  
- **Compatible with 3.3V, 5V, and 15V Logic Inputs.**  

This information is based solely on the manufacturer's datasheet for the IR2111SPBF.

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