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IR2109-IR21094-IR21094S-IR2109S-IR2109STR
Half Bridge Driver, Soft Turn-On, Single Input Plus Shut-Down, Fixed 500ns Deadtime in a 8-pin DIP package
International
TGiR Rectifier
Data Sheet No. PD60163-U
IR2109(4) (S) & (PbF)
Features
q Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
q Gate drive supply range from 10 to 20V
q Undervoltage lockout for both channels
q 3.3V, 5V and 15V input logic compatible
q Cross-conduction prevention logic
q Matched propagation delay for both channels
q High side output in phase with IN input
q Logic and power ground +/- 5V offset.
q Internal 540ns dead-time, and programmable
up to 5us with one external RDT resistor (IR21094)
q Lower di/dt gate driver for better noise immunity
q Shut down input turns off both channels.
q Available in Lead-Free
Description
The IfR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
HALF-BRIDGE DRIVER
Product Summary
VOFFSET 600V max.
kyr/- 120 mA / 250 mA
VOUT 10 - 20V
ton/oft (typ.) 750 & 200 ns
Dead Time 540 ns
(programmable up to 5uS for IR21094)
Packages
" t 14 Lead SOIC
8 LeadSOIC
14 Lead PDIP
8 Lead PDIP
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to saov
IR2109
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show Vss
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
up to 600V
IR21094
IR2109(4) (S) & (PbF) International
TOR Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High side floating absolute voltage -0.3 625
vs High side floating supply offset voltage VB - 25 VB + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
VLo Low side output voltage -0.3 Vcc + 0.3 V
DT Programmable dead-time pin voltage (IR21094 only) vss - 0.3 VCC + 0.3
VIN Logic input voltage (IN & SE) VSS - 0.3 Vcc + 0.3
Vss Logic ground (lR21094/lR21894 only) VCC - 25 V00 + 0.3
dVS/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA S +25°C (8 Lead PDIP) - 1.0
(8 Lead SOIC) - 0.625
(14 lead PDIP) - 1.6 W
(14 lead SOIC) - 1.0
RthJA Thermal resistance, junction to ambient (8 Lead PDIP) - 125
(8 Lead SOIC) - 200
(14 lead PDIP) - 75 WW
(14 lead SOIC) - 120
TJ Junction temperature - 150
Ts Storage temperature -50 150 "C
TL Lead temperature (soldering, 10 seconds) - 300
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