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IR2085S
High Speed 100V Self Oscillating 50% Duty Cycle Half Bridge Driver in a SO-8 package
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE,
HALF-BRIDGE DRIVER
FeaturesSimple primary side control solution to enable half-bridge
DC-Bus Converters for 48V distributed systems with reduced
component count and board space.•Integrated 50% duty cycle oscillator & half-bridge driver IC in a
single SO-8 package•Programmable switching frequency with up to 500kHz max per
channel•+/- 1A drive current capability optimized for low charge MOSFETs•Adjustable dead-time 50nsec – 200nsec•Floating channel designed for bootstrap operation up to +100Vdc•High and low side pulse width matching to +/- 25nsec•Adjustable overcurrent protection•Undervoltage lockout and internal soft start
Package
IR2085S
Data Sheet No. PD60206_B
DescriptionThe IR2085S is a self oscillating half-bridge driver IC with 50% duty cycle ideally suited
for 36V-75V half-bridge DC-bus converters. This product is also suitable for push-pull
converters without restriction on input voltage.
Each channel frequency is equal to fosc, where fosc can be set by selecting RT & CT, whereosc ≈ 1/(2*RT.CT). Dead-time can be controlled through proper selection of CT and can
range from 50 to 200nsec. Internal soft-start increases the pulse width during power up and maintains pulse
width matching for the high and low outputs throughout the start up cycle. The IR2085S initiates a soft start at
power up and after every overcurrent condition. Undervoltage lockout prevents operation if VCC is less than 7.5Vdc.
Simplified Circuit Diagram
Product Summary1
IR2085S
Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Recommended Operating ConditionsFor proper operation the device should be used within the recommended conditions.
Note1: Care should be taken to avoid output switching conditions where the Vs node flies inductively below ground by more
than 5V.
IR2085S
Static Electrical CharacteristicsVBIAS (VCC, VBS) = 12V, CLOAD = 1000 pF and TA = 25°C unless otherwise specified.
Dynamic Electrical CharacteristicsVBIAS (VCC, VBS) = 12V, CLOAD = 1000 pF, and TA = 25°C unless otherwise specified.
IR2085S
Lead Assignments
Functional Block Diagrams
Lead Definitions
IR2085SFig. 1 Typical Output Frequency (-25oC to 125oC)Fig. 2 Typical Dead Time (@25oC)
Fig. 3 Typical Dead Time vs Temperature
IR2085S
Pin descriptions
CS: The input pin to the overcurrent comparator. Ex-ceeding the overcurrent threshold value specified in
static electrical parameters section will terminate the
output pulses and start a new soft-start cycle as soon
as the voltage on the pin reduces below the threshold
value.
OSC: The oscillator-programming pin. Only two com-ponents are required to program the oscillator fre-
quency, a resistor (tied to the VCC and CS pins), and a
capacitor (tied to the CS and GND pins). The approxi-
mate oscillator frequency is determined by the follow-
ing simple formula:OSC = 1/ (2*RT.CT)
Where fOSC frequency is in hertz (Hz), RT resistance in
ohms (Ω) and CT capacitance in farads (F). The
recommended range for the timing resistor is between
10kW and 100kW and the recommended range for
the timing capacitor is between 47pF and 470pF. It is
not recommended to use timing resistors less than
10kΩ.
For best performance, keep the timing component
placement as close as possible to the IR2085S. It is
recommended to separate the ground and VCC traces
to the timing components.
GND: Signal ground and power ground for all func-tions. Due to high current and high frequency opera-
tion, a low impedance circuit board ground plane is
highly recommended.
HO, LO: High side and low side gate drive pins. Thehigh and low side drivers can be used to drive the
gate of a power MOSFET directly, without external
buffers. The drivers are capable of 1.2A peak source
and sink currents. It is recommended that the high
and low side drive pins should be located very close
to the gates of the high side and low side MOSFETs
to prevent any delay and distortion of the drive sig-
nals. The power MOSFETs should be low charge to
prevent any shoot through current.
b: The high side power input connection. The highside supply is derived from a bootstrap circuit using a
low-leakage schottky diode and a ceramic capacitor.
To prevent noise, the schottky diode and bypass ca-
pacitor should be located very close to the IR2085S
and separated VCC traces are recommended.
S: The high side power return connection. VS should
be connected directly to the source terminal of the
high side MOSFET with the trace as short as pos-
sible.
CC: The IC bias input connection for the device. Al-though the quiescent VCC current is very low, total sup-
ply current will be higher, depending on the MOSFET
gate charge connected to the HO and LO pins, and
the programmed oscillator frequency. Total VCC cur-
rent is the sum of quiescent VCC current and the aver-
age current at HO and LO. Knowing the operating
frequency and the MOSFET gate charge (QG), the
average current can be calculated from:ave = QG X fosc
To prevent noise problems, a bypass ceramic capacitor
connected to VCC and GND should be placed as close
as possible to the IR2085S.
The IR2085S has an under voltage lockout feature for
the IC bias supply, VCC. The minimum voltage required
on VCC to make sure that the IC will work within speci-
fications is 9.5V. Asymmetrical gate signals on HO and
LO pins are expected when VCC is between 7.5V and
8.5V.
Application InformationA 220 kHz half-bridge application circuit with full wave
synchronous rectification is shown in figure 4. On the
primary side, the IR2085S drives two IRF7493 - next
generation low charge power MOSFETs. The primary
side bias is obtained through a linear regulator from
the input voltage for start-up, and then from the trans-
former in steady state. The IRF7380, a dual 80V power
MOSFET in an SO8 package is used for the primary
side bias function. Two IRF6603 - novel DirectFET
