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IR20153SPBF
HIGH SIDE DRIVER WITH RECHARGE
In te rn a ti (D n al Preliminary Data Sheet P060214 Rev B
TOR Rectifier IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features Product Summary
q Floating channel designed for bootstrap operation
Fully operational up to 150V VOFFSET 150V max.
Tolerant to negative transient voltage, dV/dt immune
q Gate drive supply range from 5V to 20V -
q Undervoltage lockout kyrl- 400mA @ VBS=7V,
q Internal recharge FET for bootstrap refresh 1 EA @ 1/BS=16V
q Internal deadtime of 11ps and 0.8ps
q CMOS Schmitt-triggered input logic
q Output out of phase with input
q Reset input
q Split pull-up and pull-down gate drive pins ton/off 1.0 and 0.3 vs
q Also available LEAD-FREE (PbF)
VOUT 5-20V
. . Package
Descri ption
The IR20153S is a high voltage, high speed power MOSFET driver. Proprietary HVIC ,
and latch immune CMOS technologies enable mggedized monolithic construction. The J dg5r2,
logic input is compatible with standard CMOS output down to 3.3V. The output driver 's51''ii''tT
features a high pulse current buffer stage designed for minimum cross-conduction. The '
floating channel can be used to drive an N-channel power MOSFET in the high or low 8-Lead SOIC
side conhguration which operates up to 150 volts.
Typical Connection
up to 150V
(Refer to Lead Assignments
for correct configuration).
This/Thesediagram(s) show
electrical connections only.
Please refer to ourAppIica-
tion Notes and DesignTips
for proper circuit board lay-
1
IR20153S & (PbF)
Absolute Maximum Ratings
International
IEER Rectifier
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to GND, all currents are defined positive into any lead. This is a stress only rating
and operation of the device at these or any conditions exceeding those indicated in the operational sections of this
specifications is not implied.
Symbol Definition Min. Max. Units
VB High side driver output stage voltage -5.0 170
vs High side floating supply offset voltage - 8.0 150
VH0 Output voltage gate high connection Vs - 0.3 VB + 0.3 V
Vcc Low side fixed supply voltage -0.3 25
VIN Input voltage (IN and RESET) -0.3 Vcc +0.3
dV/dt Allowable offset voltage slew rate - 50 V/nsec
TJ Junction temperature -55 150
Ts Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300 "C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 2. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to GND. The vs offset rating is tested
with all suppliers biased at Vcc=5V and VBS=7V.
Symbol Definition Min. Max. Units
VB High side driver output stage voltage Vs + 5 Vs + 20
Vs High side floating supply offset voltage -1.6 150
VH0 Output voltage gate high connection Vs VB V
Vcc Supply voltage 5 20
VIN Input voltage (IN and RESET) 0 Vcc
TA Ambient temperature -55 150 ''C
2
