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IR20153S
High Side Driver with Recharge in a 8-lead SOIC package
International
TOR Rectifier
Features
q Floating channel designed for bootstrap operation
Fully operational up to 150V
Tolerant to negative transient voltage, dV/dt immune
q Gate drive supply range from 5V to 20V
q Undervoltage lockout
q Internal recharge FET for bootstrap refresh
q Internal deadtime of 11ps and 0.8ws
q CMOS Schmitt-triggered input logic
q Output out of phase with input
q Reset input
q Split pull-up and pull-down gate drive pins
q Also available LEAD-FREE (PbF)
Description
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side ctsnfiguration which operates up to 150 volts.
Typical Connection
Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Product Summary
VOFFSET 150V max.
kye/- 400mA @ VBS=7V,
1.5A @ VBS=16V
VOUT 5-20V
ton/off 1.0 and 0.3 us
Package
8-Lead SOIC
(Referto Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
up to 150V
IR20153S & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to GND, all currents are defined positive into any lead. This is a stress only rating
and operation of the device at these or any conditions exceeding those indicated in the operational sections of this
specifications is not implied.
International
ISER ilectifier
Symbol Definition Min. Max. Units
VB High side driver output stage voltage -5.0 170
Vs High side floating supply offset voltage - 8.0 150
VH0 Output voltage gate high connection Vs - 0.3 VB + 0.3 V
Vcc Low side fixed supply voltage -0.3 25
VIN Input voltage (IN and RESET) -O.3 Vcc +0.3
dV/dt Allowable offset voltage slew rate - 50 V/nsec
TJ Junction temperature -55 150
Ts Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300 ''C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 2. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to GND. The vs offset rating is tested
with all suppliers biased at Vcc=5V and VBS=7V.
Symbol Definition Min. Max. Units
VB High side driver output stage voltage VS + 5 Vs + 20
Vs High side floating supply offset voltage -1.6 150
VH0 Output voltage gate high connection Vs VB V
Vcc Supply voltage 5 20
VIN Input voltage (IN and RESET) 0 Vcc
TA Ambient temperature -55 150 “C
2
