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IR2011STRPBF
High and Low Side Driver in a 8-Lead package
Data Sheet No.PD60217 revB
International
TOR Rectifier IR2011(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features Product Summary
q Floating channel designed for bootstrap operation
Fully operational up to +200V VOFFSET 200V max.
Tolerant to negative transient voltage, dV/dt immune
q Gate drive supply range from 10V to 20V
q Independent low and high side channels Io+/- 1.0A/1.0Atyp.
q Input logicHlN/LIN active high
q Undervoltage lockout for both channels VOUT 10 - 20V
q 3.3V and 5V input logic compatible
q CMOS Schmitt-trlggered inputs with pull-down ton/off 80 & 60 ns typ.
q Matched propagation delay for both channels
q Also available LEAD-FREE (PbF) Delay Matching 20 ns max
Applications
q Audio Class D amplifiers
q High power DC-DC SMPS converters Packages
q Other high frequency applications
Descri ption
The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter 8-Lead SOIC
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down IR2011S
to 3.0V logic. The output drivers feature a high pulse wrrent buffer stage designed for
minimum driver cttoss-aonduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri-
etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con-
struction. 8-Lead PDIP
Typical Connection IR2011
COM LOAD
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
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IR2011(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
International
TOR Rectifier
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 225
Vs High side floating supply offset voltage VB - 25 V5 + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3
Wap Low side fixed supply voltage -0.3 25 V
VLO Low side output voltage -O.3 VCC +0.3
VIN Logic input voltage (HIN & LIN) -0.3 VCC +0.3
dl/s/dt Allowable offset supply voltage transient (figure 2) - 50 V/ns
PD Package power dissipation @ TA f +25°C (8-lead DIP) - 1.0
(8-Iead SOIC) - 0.625 W
RTHJA Thermal resistance, junction to ambient (8-lead DIP) - 125 °C/W
(8-Iead SOIC) - 200
TJ Junction temperature - 150
Ts Storage temperature -55 150 ''C
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The Vs and COM offset ratings
are tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side Mating supply absolute voltage Vs + 10 Vs + 20
Vs High side floating supply offset voltage Note 1 200
VH0 High side floating output voltage Vs VB
Vcc Low side fixed supply voltage 10 20 V
VLO Low side output voltage 0 VCC
VIN Logic input voltage (HIN & LIN) COM 5.5
TA Ambient temperature -40 125
Note 1: Logic operational for Vs of -4 to +200V. Logic state held for Vs of -4V to A/BS.
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