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|40V 1A Schottky Diode in a Flipky package. Flipky is 1/5 the footprint of a SMA package.|
Bulletin l0148J reV.C 03/04
Low Thermal Resistance
One-mth Footprint of SMA
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
Ultra Low VF per Footprint Area
Major Ratings and Characteristics
IRAV) Rectangular waveform
IFSM @ tp = 5 ps sine
VF @1.0Apk, TJ=125°C
T J range
True chip-scale packaging is available from International
Rectifier. The IR140CPS surface-mount Schottky
rectifer has been designed for applications requiring low
fon/vard drop and very small foot prints on PC boards.
Typical applications are in disk drives, switching power
supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
. Small foot print, surface mountable
. Low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
The FlipkyTM package, is one-fifth the footprint of a
comparable SMA package and has a profile of less then
.8mm. Combined with the low thermal resistance of the
die level device, this makes the FlipkyTM the best device
for application where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
Bulletin I0148J rev.C 03/04 IEER Rectifier
Part number |R14OCSP
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cycle@TPCB= 112°C, rectangular waveform
IFSM Max. Peak One Cycle Non-Repetitive 250 A 5ps Sine or3ps Rect. pulse Following any rated
load condition and
Surge Current @ 25''C 21 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non- Repetitive Avalanche Energy 10 mJ To=25 "C, IAS=2.OA, L= 5.0mH
|AR Repetitive Avalanche Current 2.0 A Current decaying linearly to zeroin 1 usec
Frequencylimited byT, max.Va=1.5xVrtypical
Parameters Typ. Max. Units Conditions
VFM Max. Forward Voltage (1) 0.43 0.48 V @ IA T, = 25 ''C
Drop 0.51 0.56 @ 2A
* See Fig.1 0.34 0.38 @ IA T: = 125 ''C
0.46 0.53 @ 2A
Ira, Max. Reverse Leakage (1) 10 80 pA T: = 25 ''C VR = rated VR
Current 3.5 20 v,, = 20V
*See Fig.2 2 10 VR=10V
1.5 5 v,, = 5V
9.0 20 mA T: = 125 ''C VR = rated VR
3.5 8 v,, = 20V
2.5 6 v,, = 10V
2 5 VR = 5V
c, Max. Junction Capacitance - 160 pF VR = 5VDC (test signal range 100kHz to 1MHz) 25''C
dv/dt Max. Volatge Rate of Charge - 10000 W ps (Rated VR)
(1) Pulse Ndth < 300ps, Duty Cycle < 2%
Parameters Value Units Conditions
T., Max.JunctionTemperature Range(*) -55to150 °C
Tstg Max.Storage Temperature Range -55to150 ''C
RthJL Typ. Thermal Resistance Junction 40 'C/W DC operation
RmJA Max.Thermal Resistance Junction 62 °C/W
(*) ditot < 1 thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB