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IR03H420
500V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
nternaiitynall Data Sheet No. PD-6.077
P* Rectifier lilR03H42 O
HIGH VOLTAGE HALF-BRIDGE
Features Product Summary
El Output Power MOSFETs in half-bridge configuration VIN (max) 500V
El 500V Rated Breakdown Voltage
CI High side gate drive designed for bootstrap tonloff 130 ns
operation
D Matched propagation delay for both channels trr 270 ns
III Independent high and low side output channels
ty Undervoltage lockout RDS(on) 3-09
El 5V Schmitt-triggered input logic -
n Half-Bridge output in phase with HIN PD (TA - 25 oC) 2.0W
ty Cross conduction prevention logic
El Internally set dead time
Package
Description
The IR03H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET© power rr,mpsrair_,,,s.,
MOSFET technology, enable ruggedized single |R03H420 (iWil
package construction. The logic inputs are compatible are.,
with standard CMOS or LSTTL outputs. The front end
features an independent high and low side driver in , , , 'ii w w ,
phase with the logic compatible input signals. The
output features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the half-
bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
Typical Connection
cUP TO 500V DC BUS
IRD3H420
TD LOAD
IR03H420
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol l Definition Min. Max. Units
VIN High Voltage Supply -0.3 500
V3 High Side Floating Supply Absolute Voltage -0.3 525
V0 Half-Bridge Output Voltage -0.3 VIN + 0.3 V
VIHNIL Logic Input Voltage (HIN &FN) -0.3 Vcc + 0.3
Vcc Low Side and Logic Fixed Supply Voltage -0.3 25
dv/dt Peak Diode Recovery dv/dt --- 3.5 V/ns
Pro Package Power Dissipation @ TA s: +25°C - 2.00 W
ReJA Thermal Resistance, Junction to Ambient - 60 °CNV
TJ Junction Temperature -55 150
Ts Storage Temperature -55 150 "C
TL Lead Temperature (Soldering, 10 seconds) - 300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Parameter
Symbol l Definition Min. Max. Units
VB High Side Floating Supply Absolute Voltage VO + 10 V0 + 20
VIN High Voltage Supply --- 500 V
VO Half-Bridge Output Voltage (note 1) 500
Vcc Low Side and Logic Fixed Supply Voltage 10 20
VIHNIL Logic Input Voltage (HIN & LIN) 0 Vcc
ID Continuous Drain Current (TA = 25''C) - 0.7 A
(TA = 85''C) - 0.5
TA Ambient Temperature -40 125 "C
Note I: Logic operational for vo of -5 to 500 V. Logic state held for vo of -5 to - VB.
