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IPU04N03LA
Low Voltage MOSFETs
CP""''"
Intmleon IPD04N03LA
le C n o o i e s
9 IPU04N03LA
optiMosh Power-Transistor
Product Summary
Features VDS 25 V
. Ideal for high-frequency dc/dc converters RDS(on),max (SMD version) 3.8 mn
. Qualified according to JEDECI) for target applications
l 50 A
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM)
P-T0252-3-11 P-TO251-3-21
. Very low on-resistance R DS(on)
. Superior thermal resistance
. 175 ''C operating temperature
. dv/dt rated
Type Package Ordering Code Marking
|PDO4N03LA P-T0252-3-1 1 Q67042-S4177 04N03LA pin 1
IPU04N03LA P-T0251-3-21 Q67042-S4198 04N03LA gnugce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TC=25 oc') 50 A
Tc=100 ''C 50
Pulsed drain current ID,pulse TC=25 °C3) 350
Avalanche energy, single pulse E AS I 0:40 A, Rcs=25 n 890 mJ
I 0:50 A, VDS=20 V,
Reverse diode dv/dt dv/dt dildt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage“ VGS :20 V
Power dissipation Ptot TC=25 ''C 115
Operating and storage temperature Ts, Tstg -55 ... 175 ''C
IEC climatic category; DIN IEC 68-1 55/175/56
l) J-STD20 and JESD22
Rev. 1.5 page 1 2004-02-04
CP""''"
Infineon IPD04N03LA
e C h n o l o i e s
I 9 IPU04N03LA
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 1.3 K/W
SMD version, device on PCB RNA minimal footprint - - 75
6 cm2 cooling area5) - - 50
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 25 - - V
Gate threshold voltage Vsath) VDS=V03, ID=80 HA 1.2 1.6 2
V =25 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=25 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Rosmn) VGS=4.5 V, I 0:50 A - 4.8 5.9 m9
Vss=4.5 V, [0:50 A,
SMD version - 4.6 5.7
Vss=10 V, ID=50 A - 3.4 4.0
VGS=10 V, 1--50 A,
SMD version - 3.2 3.8
Gate resistance RG - 1.3 - 9
V >2ll R ,
Transconductance " I 33' I DI DS(on)max 48 96 - S
ID--50 A
2) Current is limited by bondwire; with an RmJC=1.3 K/Wthe chip is able to carry 136 A.
3) See figure 3
4) lemax=150 ''C and duty cycle D<0.25 for VGS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.5
page 2
