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IPS521G
Intelligent Power Switch 1 Channel High Side Driver in a SO-8 Package
Internat onol
TOR Rectifier
Data Sheet No.PD 60157-H
IPS521G
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
q Over temperature protection (with auto-restart)
Short-circuit protection (current limit)
. Active clamp
o E.S.D protection
. Status feedback
Open load detection
Logic ground isolated from power ground
Description
The IPS521G is a fully protected hve terminal high side
switch with built in short circuit, over-temperature, ESD
protection, inductive load capability and diagnostic
feedback. The output current is controlled when it
reaches lnm value. The current limitation is activated
until the thermal protection acts. The over-tempera-
ture protection turns off the high side switch if the
junction temperature exceeds Tshutdown. It will au-
tomatically restart after the junction has cooled 7°C
below Tshutdown. A diagnostic pin is provided for
status feedback of short-circuit, over-temperature
and open load detection. The double level shifter
circuitry allows large offsets between the logic ground
and the load ground.
Typical Connection
Product Summary
Rds(on) 100mn (max)
V clamp 50V
I Limit 10A
V open load 3V
Truth Table
Op. Conditions In Out Dg
Normal H H H
Normal L L L
Open load H H H
Open load L H H
Over current H L (limiting) L
Over current L L L
Over-temperature H L (cycling) L
Over-temperature L L L
Package
+ 5v Output pulI-up resistor
Status I I Vcc
feedback D
E [ g Logic control
Rdg I Out
Rin In On d
i _ Load
signal
Logic Gnd Load 0nd;
8 Lead SOIC
IPS521G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25°C unless otherwise specified).
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vout Maximum output voltage Vcc-50 Vcc+0.3
Vottset Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 V
Vin Maximum Input voltage -0.3 5.5
lin, max Maximum positive IN current -5 10 mA
Vdg Maximum diagnostic output voltage -O.3 5.5 V
Idg, max Maximum diagnostic output current -1 10 mA
lsd cont. Diode max. permanent current (1)
(rth = 125°C/W) - 1.4 A
lsd pulsed Diode max. pulsed current (1) - 10
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500f2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=OQ, L=10pH
Pd Maximum power dissipationO)
(rth=125°C/W) - 1
Tj max. Max. storage & operating junction temp. -40 +150 oc
Vcc max. Maximum Vcc voltage - 50 V
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
'tl $2232: ::::::2222 mi: 'llasleaf/oooottppr,ifntt - "if - 0cm 8 Lead SOIC
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vcc Continuous Vcc voltage 5.5 35
VIH High level input voltage 4 5.5 V
VIL Low level input voltage -0.3 0.9
lout Continuous output current
Tc=85°C (TAmbient = 85°C, Tj = 125°C, Rth = 100°CNV) - 1.6 A
Rin Recommended resistor in series with IN pin 4 6
Rdg Recommended resistor in series with DG pin 10 20 kn
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
