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IPS511GIRN/a2020avaiIntelligent Power Switch 1 Channel High Side Driver in a SO-8 Package
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IPS511G-IPS511GTR-IPS512G
Intelligent Power Switch 1 Channel High Side Driver in a SO-8 Package
Data Sheet No.PD60156-K
International
IeaR Rectifier IPS5rtGllPS512G
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features Product Summary
. Over temperature protection (with auto-restart)
Short-circuit protection (current limit)
. Active clamp Rds(on) 150mn (max)
. E.S.D protection
. Status feedback V 50V
. Open load detection clamp
. Logic ground isolated from power ground I Limit 5A
V open load 3V
Description
The lPS511G/lPS512G are fully protected five terminal
high side switches with built in short-circuit, over-tem- Truth Table
perature, ESD protection, inductive load capability .-.
and diagnostic feedback. The output current is con- Op. Conditions In Out Dg
trolled when it reaches llim value. The current limitation Normal H H H
is activated until the thermal protection acts. The Normal L L L
over-temperature protection turns off the high side H
switch ifthejunction temperature exceeds Tshutdown. Open load H H
It will automatically restart after the junction has Open load L H H
cooled 7°C below Tshutdown. A diagnostic pin is Overcurrent H . ... L
provided for status feedback of short-circuit, over- 0 L L (I'Tt'ng)
temperature and open load detection. The double vercurrent L
level shifter circuitry allows large offsets between the Over-temperature H L (cycling) L
logic ground and the load ground. Over-temperature L L L
Typical Connection Available Package
+ 5v Output pull-up resistor l
St t i ,
t‘ezdiick Vcc " ferait2
7 Logic control RS, k ' G
Rdg _- Out
R 8 Lead SOIC
- In Gnd (Single)
),-i:,s-:,i: Load PS51 1G 16 Lead SOIC
—Slgnal Logic Gnd Load Gndl (Dual)
IPS512G
1
IPS511G/lPS512G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25°C unless otherwise specified).
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vout Maximum output voltage Vcc-50 Vcc+0.3
Voffset Maximum logic ground to load ground offset Vcc-5O Vcc+0.3 V
Vin Maximum Input voltage -0.3 5.5
lin, max Maximum IN current -5 10 mA
Vdg Maximum diagnostic output voltage -0.3 5.5 V
Idg, max Maximum diagnostic output current -1 10 mA
lsd cont. Diode max. continuous current (1)
(IPS511G) - 1.4
(per leg/both legs ON - IPS512G) - 0.8 A
lsd pulsed Diode max. pulsed current (1) - 10
ESD1 Electrostatic discharge voltage (Human Body) - 4000 C=100pF, R=1500Q,
ESD2 Electrostatic discharge voltage (Machine Model) - 500 V C=200pF, R=OQ, L=10ttH
Pd Maximum power dissipation
(rth=125°C/W) FS511G - 1 W
(rth=85°CNV, both legs on) FS512G - 1.5
Tj max. Max. storage & operating junction temp. -40 +150 °C
Vw max Maximum Vcc voltage - 50 V
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
. n wi h n r f rin - l -
'tl Td',,",),) $333: with :T'assjafe séfprirtit - 8000 - 8 Lead SOIC
Rth1 Thermal resistance with standard footprint
(2 mos on) (2 mosfets on) - 85 - "CA/V
Rth2 (1) Thermal resistance with standard footprint 16 Lead SOIC
(1 mos on) (1 mosfet on) - 100 -
Rth2 Thermal resistance with I" square footprint
(2 mos on) (2 mosfets on) - 50 -
(1) Limited by junction temperature (pulsed current limited also by internal wiring)

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