IPS1051LPBF ,Intelligent Power Switch Single/Dual Channel Low Side Driver in a SOT-223 PackageFeatures Product Summary • Over temperature shutdown • Over current shutdown Rds(on) 250mΩ ( ..
IPS2041LPBF ,Intelligent Power Switch 1 Channel Low Side Driver in a SOT-223 Packagefeatures a low side MOSFET with over-current, over-temperature, ESD protection and drain to source ..
IPS511 ,Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL PackageData Sheet No.PD 60155HIPS511/IPS511SFULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
IPS511G ,Intelligent Power Switch 1 Channel High Side Driver in a SO-8 PackageFeatures Product Summary• Over temperature protection (with auto-restart)• Short-circuit protection ..
IPS511GTR ,Intelligent Power Switch 1 Channel High Side Driver in a SO-8 PackageFeatures Product Summary• Over temperature protection (with auto-restart)• Short-circuit protection ..
IPS511S ,Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead PackageFeatures Product Summary• Over temperature protection (with auto-restart)• Short-circuit protection ..
IRLR3714 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max I High Frequency Isolated DC-DCDSS DS(on) D Converters with Synchronous Rect ..
IRLR3714TR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 94266IRLR3714SMPS MOSFETIRLU3714®HEXFET Power MOSFET
IRLR3714TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters with Synchronous Rect ..
IRLR3714TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 95554AIRLR3714PbFSMPS MOSFETIRLU3714PbFHEXFET Power MOSFET
IRLR3714Z ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R maxQgDSS DS(on) High Frequency Synchronous Buck Converters for Computer Process ..
IRLR3714ZPBF , HEXFET Power MOSFET
IPS1051LPBF
Intelligent Power Switch Single/Dual Channel Low Side Driver in a SOT-223 Package
International
Data Sheet No. PD60298_B
11t2R Rectifier |PS1051LPbF / IPS1052GPbF
SINGLE/DUAL CHANNEL
INTELLIGENT POWER LOW SIDE SWITCH
Featu res
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
ESD protection
Optimized Turn On/Off for EMI
Diagnostic on the input current
Description
The |PS1051LPbF and |PS1052GPbF are Intelligent
Power Switches (IPS) featuring low side MOSFETs with
over-current, ouer-temperature, ESD protection and drain
to source active clamp. The |PS1052G is a dual channel
device while the FS1051 is a single channel. These
devices offer protections and the high reliability required in
harsh environments. Each switch provides efrcient
protection by turning OFF the power MOSFET when the
temperature exceeds 165°C or when the drain current
reaches 3A. The device restarts once the input is cycled.
A serial resistance connected to the input provides the
diagnostic. The avalanche capability is significantly
enhanced by the active clamp and covers most inductive
load demagnetizations.
Typical Connection
Product Summary
Rds(on) 250mn (max.)
Vclamp 39V
Ishutdown 2.8A (typ.)
Packages
ttif'))
SOT-223 SO-8
IP81051LPbF |PS1052GPbF
2-4 (IPS1052G)
1 (lPS1051L) IN
Control
Input R I
Input Signal
v Diag
1-3 (IPS1052G)
3 (lPS1051L)
5-6-7-8 (IPS1052G)
(lPS1051L)
www.Irt.com
International
IEER Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
IPS1051LPbF / IPS1052GPbF
Symbol Parameter Min. Max. Units
Vds Maximum drain to source voltage -0.3 36 V
Vds cont. Maximum continuous drain to source voltage - 28 V
Vin Maximum input voltage -0.3 6 V
Isd cont. Max diode continuous current (limited by thermal dissipation) - 1.3 A
Maximum power dissipation (internally limited by thermal protection)
Pd Rth=60°CNV |PS1051 L I" sqrt. footprint 2 W
Rth=100°C/W IPS1052G std. footprint 1.25
Electrostatic discharge voltage (Human body) C=100pF, R=15OOQ
Between drain and source - 4
ESD Other combinations - 3 kV
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Q
Between drain and source - 0.5
Other combinations - 0.3
T] max. Max. storage & operating temperature junction temperature -40 150 ''C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
Rth1 Thermal resistance junction to ambient |PS1051 L SOT-223 std. footprint 100 -
Rth2 Thermal resistance junction to ambient |PS1051 L SOT-223 l" sqrt. footprint 60 -
Rth1 Thermal resistance junction to ambient |PS1052G SO-8 std. Foot.pr.i.nt . 100 - ''C/W
1 die active
Thermal resistance junction to ambient IPS1052G SO-8 std. footprint
Rth1 . . 130 -
2 die active
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
VIH High level input voltage 4.5 5.5 V
VIL Low level input voltage 0 0.5
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V - 1 4 A
Rth=60°CNV |PS1051L I'' sqrt. Footprint .
Ids Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V - 1 1 A
Rth=100oC/W IPS1052G I" sqrt. Footprint - 1 die active .
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V 0 5 A
Rth=130°CNV IPS1052G I" sqrt. Footprint - 2 die active .
Rin Recommended resistor in series with IN pin to generate a diagnostic 0.5 10 kn
Max L Max. recommended load inductance ( including line inductance )(1) - 30 pH
Max. F Max. frequency - 10 kHz
Max. t rise Max. input rise time - 1 ps
(1) Higher inductance is possible if maximum load current is limited - see figure 11
2
