IPS042GTR ,Intelligent Power Switch 2 Channel Low Side Driver in a SO-8 PackageData Sheet No.PD 60153-JIPS042GDUAL FULLY PROTECTED POWER MOSFET SWITCH
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IPS042G-IPS042GTR
Intelligent Power Switch 2 Channel Low Side Driver in a SO-8 Package
Data Sheet N0.PD 60153-J
Internat onol
TOR Rectifier IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features Product Summary
. Over temperature shutdown
. Over current shutdown
. Active clamp Rds(on) 500mn (max)
. Low current & logic level input
. E.S.D protection V clamp 50V
. . lshutdown 2A
Description
The IPSO42G is a fully protected dual low side SMART Ton/Toe 1.5pus
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET© POWER
MOSFET and a gate driver. It offers full protection Package
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165°C or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
8-Lead SOIC
Typical Connection
R in series D
(if needed)
—i: IN control "
Logic signal
(Refer to lead assignment for correct pin configuration)
1
IPS042G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (T Ambient = 25°C unless otherwise specified). PCB mounting uses the standard footprint with 70 um
copper thickness.
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47
Vin Maximum input voltage -0.3 7 V
lin, max Maximum IN current -10 +10 mA
Isd cont. Diode max. continuous current (1)
(for all Isd mosfets, rth=125°CNV) - 1.2 A
Isd pulsed Diode max. pulsed current (1) - 3
Pd Maximum power dissipation“)
(for all Pd mosfets, rth=125°CNV) - W
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500f2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=OQ, L=10uH
T stor. Max. storage temperature -55 150 "c
T] max. Max. junction temperature -40 +150
Thermal Characteristics
Symbol Parameter Min Typ. Max. Units Test Conditions
Rth1 Thermal resistance with standard footprint
(2 mosfets on) - 100 -
Rth2 Thermal resistance with standard footprint 0
(1 mosfet on) - 125 - C/W
Rth3 Thermal resistance with 1" square footprint
(2 mosfets on) - 65 -
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous Drain to Source voltage - 35
VIH High level input voltage 4 6 V
VIL Low level input voltage 0 0.5
Ids Continuous drain current (both mosfets at this current)
Tamb=85°C TAmbient = 85°C, IN = 5V, rth = 100°CNV, Tj = 125°C - 0.53 A
Rin Recommended resistor in series with IN pin 1 5 kn
Tr-in(max) Max recommended rise time for IN signal (see fig. 2) - 1 us
Fr-lsc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
