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IPS031R
Intelligent Power Switch 1 Channel Low Side Driver in a D-Pak Package
Data Sheet No.PD60220
International
IWR Rectifier IPS031R
FULLY PROTECTED POWER MOSFET SWITCH
Features Product Summary
. Over temperature shutdown
q Over current shutdown
. Active clamp Rds(on) 60mn (max)
. Low current & logic level input
q E.S.D protection V clamp 50V
. . Ishutdown 14A
Description
The IP8031R are fully protected three terminal SMART Ton/Toff 1 .5ps
POWER MOSFETs that feature over-current, over-tem-
perature, ESD protection and drain to source active
clamp.These devices combine a HEXFET© POWER
MOSFET and a gate driver. They offer full protection Package
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection byturning OFF the power MOSFET
when the temperature exceeds 165°C or when the
drain current reaches 14A. The device restarts once the
input is cycled. The avalanche capability is significantly
enhanced by the active clamp and covers most induc-
tive load demagnetizations.
3-Lead D-Pak
Typical Connection
—l: control
Logic signal 1
(Refer to lead assignment for correct pin configuration)
R in series D
(if needed)
IN -ir"
IPS031 R
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25°C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 um copper thickness.
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47
Vin Maximum input voltage -0.3 7 V
Iin, max Maximum IN current -10 +10 mA
Isd cont. Diode max. continuous current (1)
rth=100°C/W - 1.6 D-Pak Std footprint
rth=5°C/W - 18 A D-Pak with Rth=5°C/W
rth=50°C/W - 3 D-Pak with sq. footprint
lsd pulsed Diode max. pulsed current (1) - 18
Pd Maximum power dissipation“)
rth=50°CNV - 2.5
rth=100°C/W - 1.25 w
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500S2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0f2, L=10pH
T stor. Max. storage temperature -55 150 kV
Tj max. Max. junction temperature -40 +150
Tlead Lead temperature (soldering, 10 seconds) - 300 °C
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth 1 Thermal resistance with standard footprint - 100 - o
Rth 2 Thermal resistance with 1" square footprint - 50 - Cl W D-PAK
Rm 3 Thermal resistance junction to case - 3 -
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage - 35
VIH High level input voltage 4 6 V
VIL Low level input voltage 0 0.5
Ids Continuous drain current
Tamb=85°C TAmbient = 85°C, IN = 5V, rth = 5(PC/W, Tj = 125°C) 1" sq. footprint - 3.3 A
TAmbient = 85°C, IN = 5V, rth = 100°C/W, T] = 125°C) Std. footprint - 2
Rin Recommended resistor in series with IN pin 0.2 5 kn
Tr-in(max) Max recommended rise time for IN signal (see Fig. 2) - 1 ws
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
2
