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IPS031G-IPS032G
Intelligent Power Switch 1 Channel Low Side Driver in a SO-8 Package
Data Sheet N0.PD 60151 -J
Interhot onol
TOR Rectifier IPS031GllPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features Product Summary
. Over temperature shutdown
. Over current shutdown Rds(on) 70mn (max)
. Active clamp
. Low current & logic level input V V
o E.S.D protection clamp 50
Ishutdown 12A
Descri tion
p Ton/Toe 1.5ws
The lPS031G/lPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain Packages
to source active clamp.These devices combine a
HEXFET© POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning . 'carst ,
off the power MOSFET when the temperature ex- '\- F
ceeds 165°C or when the drain current reaches 12A. ," "e
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag- 8-Lead SOIC 16-Lead SOIC
netizations. IPS031G IPS032G
(Dual)
Typical Connection
R in series D
(if needed)
S IN control t
Logic signal I
(Refer to lead assignment for correct pin assignment)
1
IPS031G/lPS032G International
TOR Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (T Ambient = 25°C unless otherwise specified). PCB mounting uses the standard footprint with 70 um
copper thickness. All Sources leads of each mosfet must be connected together to get full current capability
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47
Vin Maximum input voltage -0.3 7 V
lin, max Maximum IN current -10 +10 mA
lsd cont. Diode max. continuous current (1)
(rth=12YC/W) IPSO31G - 1.4
(for all sd mosfets, rth=85°C/W) IPS032G - A
lsd pulsed Diode max. pulsed current (1) (for ea. mosfet) - 15
Pd Maximum power dissipation“)
(rth=125°C/W) IPS031G - 1 W
(for all Pd mosfets, rth=85°C/W) IPS032G - 1.5
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500f2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=OQ, L=10pH
T stor. Max. storage temperature -55 150 °C
T] max. Max. junction temperature -40 150
Thermal Chacteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth1 Thermal resistance with standard footprint - 100 -
Rth2 Thermal resistance with 1" square footprint - 65 - SOIC-8
Rth1 Thermal resistance with standard footprint
(2 mos on) (2 mosfets on) . . - 85 - o C AN
Rth2 Thermal resistance with standard footprint SOC-Iii
(1 mos on) (1 mosfet on) - 100 -
Rth3 Thermal resistance with 1" square footprint
(2 mos on) (2 mosfets on) - 60 -
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
