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IPS022G-IPS022GTR
Intelligent Power Switch 2 Channel Low Side Driver in a SO-8 Package
International
19R Rectifier
Data Sheet No.PD60203
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
q Over temperature shutdown
q Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The lPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET© POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165°C or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
Typical Connection
Product Summary
Rds(on) 150mn (max)
lshutdown 5A
V clamp
Ton/Toff 1 .5ps
Package
4tiiii'i'
8-Lead SOIC
IPSOZZG
(Dual)
R in series
(if needed)
control "
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS022G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25°C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 pm copper thickness.
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V
Vin Maximum input voltage -O.3 7
lin, max Maximum IN current -10 +10 mA
Isd cont. Diode max. continuous current (1)
(S Isd mosfets, rth=125°C/W) - 1.4 A
Isd pulsed Diode max. pulsed current (1) (forea. mosfet) - 10
Pd Maximum power dissipation“)
(T Pd mosfets, rth=125°C/W) - W
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500§2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=0Q, L=10WH
T stor. Max. storage temperature -55 150 oc
Tj max. Max.junction temperature -40 +150
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth1 Thermal resistance with standard footprint
(2 mos on) (2 mosfets on) - 100 -
Rth2 Thermal resistance with standard footprint °C/W
(1 mos on) (1 mosfet on) - 127 -
Rth3 Thermal resistance with 1" square footprint
(2 mos on) (2 mosfets on) - 60 -
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
