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IPP05N03LA
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
optiMosh Power-Transistor
Features
IPB05N03LA
IPI05N03LA, |PP05N03LA
. Ideal for high-frequency dc/dc converters
. Qualified according to JEDECI) for target application
. N-channel - Logic level
. Excellent gate charge x RDSM product (FOM)
. Very low on-resistance R won)
. Superior thermal resistance
. 175 "C operating temperature
Product Summary
V08 25 v
R DS(on),max (SMD version) 4.6 m9
l D 80 A
P-T0263-3-2 P-T0262-3-1 P-TO220-3-1
. dv/dt rated 1
Type Package Ordering Code Marking drain
IPB05N03LA P-T0263-3-2 Q67042-S4141 O5N03LA pm 2
|Pl05N03LA P-T0262-3-1 Q67042-S4142 05N03LA giant
|PP05N03LA P-T0220-3-1 Q67042-S4143 05N03LA gnurgce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TC=25 oc') 80 A
Tc=100 ''C 76
Pulsed drain current ID,pulse TC=25 °C3) 385
Avalanche energy, single pulse EAS lrr--72 A, Rcs=25 f2 190 mJ
10:80 A, VDS=20 v,
Reverse diode dv/dt dv/dt dildt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage“ VGS +20 V
Power dissipation Ptot TC=25 ''C 94
Operating and storage temperature Ts, Tstg -55 ... 175 ''C
IEC climatic category; DIN IEC 68-1 55/175/56
l) J-STD20 and JESD22
Rev. 1.4
page 1 2004-03-23
CP""''"
Infineon
lechnologies
IPB05N03LA
IPI05N03LA, |PP05N03LA
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 1.6 K/W
SMD version, device on PCB RNA minimal footprint - - 62
6 cm2 cooling area5) - - 40
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 25 - - V
Gate threshold voltage Vsath) VDS=V03, ID=5O HA 1.2 1.6 2
V =25 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=25 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance Rosmn) VGS=4.5 V, I 0:55 A - 6.5 8.1 m9
Vss=4.5 V, [0:55 A,
SMD version - 6.2 7.8
Vss=10 V, ID=55 A - 4.1 4.9
VGS=10 V, [0:55 A,
SMD version - 3.8 4.6
Gate resistance RG - 1 - f2
V >2ll R ,
Transconductance " I 33' I DI DS(on)max 43 86 - S
ID--55 A
2) Current is limited by bondwire; with an RmJC=1.6 K/Wthe chip is able to carry 108 A.
3) See figure 3
4) lemax=150 ''C and duty cycle D<0.25 for VGS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.4
page 2
