IPD14N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LLFeatureV 30 VDS• N-ChannelR 13.5 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3 ..
IPD200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPD20N03L ,Low Voltage MOSFETsFeatureV30 VDS• N-ChannelR 20 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3-1 ..
IPD30N03S2L-07 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IRLI620G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI630G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI640 ,Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)applications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLIB4343 ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIB4343PBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIB9343 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IPD14N03L
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LL
IPD14N03L
OptiMOSâ Buck converter series
Product Summary
Feature· N-Channel
· Logic Level
· Low On-Resistance R
· Excellent Gate Charge x R
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter
P- TO252 -3-11
IPD14N03L
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire ; with an RthJC = 2K/W the chip is able to carry ID= 59A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.
IPD14N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPD14N03L
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
80
IPD14N03L
tot
2 Drain currentD = f (TC)
parameter: VGS³ 10 V
12
16
20
24
32
IPD14N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10
IPD14N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPD14N03L
IPD14N03L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
55
60
IPD14N03L
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
15
20
25
30
35
40
50
IPD14N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
100
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
35
40
45
50
55
60
IPD14N03L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 20 A, VGS = 10 V
12
16
20
24
32
IPD14N03L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
IPD14N03L
