IPD13N03LA ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =20 ..
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IPD13N03LA
Low Voltage MOSFETs
CP""''"
[yfj,!,otty, IPD13N03LA IPF13N03LA
le C n o o i e s
9 |PS13N03LA IPU13N03LA
optiMosh Power-Transistor
Product Summary
Features VDS 25 V
. Ideal for hi h-fre uenc dc/dc converters
g q y RDS(on),max 12.8 mn
. Qualified according to JEDECI) for target applications
l 30 A
. N-channel, logic level
. Excellent gate charge x RDSM product (FOM) 31;
. Superior thermal resistance gate
. 175 ''C operating temperature
Source
Type IPD13N03LA IPF13N03LA |PS13N03LA IPU13N03LA
1.9 P.I/ (tab) tttiii-lip.:;,", " 1 253g; l E /
Package P-T0252-3-1 1 P-T0252-3-23 P-TO251-3-1 1 P-T0251-3-21
Ordering Code Q67042-S4159 Q67042-S4195 Q67042-S Q67042-S4160
Marking 13NO3LA 13N03LA 13N03LA 13N03LA
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C2) 30 A
Tc=100 ''C 30
Pulsed drain current ste TC=25 oC3) 210
Avalanche energy, single pulse E AS I 0:24 A, RGS=25 Q 60 mJ
I 0:30 A, VDS=20 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage“ VGS +20 V
Power dissipation Ptot TC=25 ''C 46 w
Operating and storage temperature Ti, Tstg -55 ... 175 "C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.5 page 1 2004-04-13
CP""''"
Infin eon IPD13N03LA IPF13N03LA
e C h n o l o i e s
l g |PS13N03LA IPU13N03LA
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 3.2 K/W
SMD version, device on PCB RNA minimal footprint - - 75
6 cm2 cooling area5) - - 50
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 25 - - V
Gate threshold voltage Vsath) VDS=VGS, ID=20 pA 1.2 1.6 2
V =25 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=25 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Rosmn) VGS=4.5 V, I 0:20 A - 17.5 21.9 mg
VGS=10V, ID=30A - 10.7 12.8
Gate resistance RG - 0.9 - 9
V >2ll R ,
Transconductance " I PSI I DI DS(on)max 18 36 - S
1--30 A
1) J-STD20 and JESD22
2) Current is limited by bondwire; with an RthJC=3.2 KNVthe chip is able to carry 47 A.
3) See figure 3
4) lemax=150 ''C and duty cycle D
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.5
page 2
