IPD12N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 10.4 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3- ..
IPD12N03LBG , OptiMOS®2 Power-Transistor
IPD135N03L G , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IPD135N03LG , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IPD13N03LA ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =20 ..
IPD14N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LLFeatureV 30 VDS• N-ChannelR 13.5 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3 ..
IRLI3803 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationTO-220 FULLPAKcapability and a low ..
IRLI3803PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
IRLI510ATU ,100V N-Channel Logic Level A-FETIRLW/I510A$GYDQFHG 3RZHU 026)(7
IRLI520 ,Power MOSFETapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI520G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI520N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD - 9.1496AIRLI520NPRELIMINARY®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Tech ..
IPD12N03L
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
IPD12N03L
IPU12N03L
OptiMOSâ Buck converter series
Product Summary
Feature N-Channel Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature Avalanche rated dv/dt rated
· Ideal for fast switching buck converters
P- TO251 -3-1P- TO252 -3-11
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
IPD12N03L
IPU12N03L
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 79A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
IPD12N03L
IPU12N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPD12N03L
IPU12N03L
1 Power dissipationPtot = f (TC)
10
20
30
40
50
60
70
80
90
110
IPD12N03L
tot
2 Drain currentID = f (TC)
parameter: VGS³ 10 V
12
16
20
24
32 IPD12N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
IPD12N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPD12N03L
IPD12N03L
IPU12N03L
5 Typ. output characteristicID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
55
60
IPD12N03L
6 Typ. drain-source on resistanceRDS(on) = f (ID)
parameter: VGS
12
16
20
24
32 IPD12N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
35
40
45
50
IPD12N03L
IPU12N03L
9 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
10
12
14
16
18
20
22 IPD12N03L
DS(on)
10 Typ. gate threshold voltageVGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
IPD12N03L
