IPD04N03L ,OptiMOS Power MOSFET, 30V, DPAK (5-Pin), RDSon = 4.2mOhm, 100A, LLFeatureV 30 VDS• N-ChannelR 4.2 mΩDS(on)• Logic LevelI 100 AD• Low On-Resistance RDS(on)P-TO252-5-1 ..
IPD04N03LA ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =80 ..
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IPD04N03L
OptiMOS Power MOSFET, 30V, DPAK (5-Pin), RDSon = 4.2mOhm, 100A, LL
IPD04N03L
OptiMOSâ Buck converter series
Product Summary
Feature· N-Channel
· Logic Level
· Low On-Resistance R
· Excellent Gate Charge x R
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter
P-TO252-5-1
Gate
pin 1
Drain
pin 3,6
Source
pin 4,5n.c.: pin 2
IPD04N03L
Thermal Characteristics
Characteristics
Static Characteristicspin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5.Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 145A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.
IPD04N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPD04N03L
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
160
IPD04N03L
tot
2 Drain currentD = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
80
90
110
IPD04N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
IPD04N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPD04N03L
IPD04N03L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
180
200
240
IPD04N03L
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
11
12
IPD04N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 20 µs
20
40
60
80
100
120
140
180
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
80
90
100
110
IPD04N03L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
11
IPD04N03L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.35
0.55
0.75
0.95
1.15
1.35
1.55
1.75
1.95
2.35
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
IPD04N03L
