IPD03N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
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IPD03N03LB
OptiMOS®2
technologies IPD03N03LBG
optiMotsh Power-Transistor
Product Summary
Features VDS 30 V
. Ideal for hi h-fre uenc dc/dc converters
g q y RDS(on),max 3.3 mn
. Qualified according to JEDECI) for target applications
ID 90 A
. N-channel, logic level
. Excellent gate charge x RDSM product (FOM)
. Superior thermal resistance
. 175 "C operating temperature PG-TO252-3-11
. Pb-free lead plating; RoHS compliant
Type Package Ordering Code Marking pln 1
|PD03N03LB G P-T0252-3-11 Q67042-S4260 03N03LB gnugce
Maximum ratings, at Tj=25 ''C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID Tc=25 oC2) 90 A
Tc=100 °C 90
Pulsed drain current ID,pulse Tc=25 °C3) 360
Avalanche energy, single pulse EAS [0:90 A, Rss=25 f2 240 mJ
I 0:90 A, Vos=20 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage') Vss :20 V
Power dissipation Ptot Tc=25 "C 115 W
Operating and storage temperature Ti, Tstg -55 ... 175 "C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.11 page 1 2004-12-16
technologies IPD03N03LBG
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RM; - - 1.3 K/W
SMD version, device on PCB RthJA minimal footprint - - 75
6 cm2 cooling area5) - - 50
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BRmSS b'ss=0 V, I D=1 mA 30 - - v
Gate threshold voltage Vesan) VDS=VGS, / D=70 pA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss T382 0 GS - 0.1 1 pA
j- 5 C
VDS=30 V, Vss--0 V,
Tj=125 °C - 10 100
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - 10 100 nA
Drain-source on-state resistance Rros(on) Vss--4.5 V, I D--60 A - 3.9 4.9 m9
VGS=10 V, ID=60 A - 2.8 3.3
Gate resistance RG - 1.3 - 9
V >2ll R ,
Transconductance " I PSI I DI DS(on)max 60 120 - S
ho--60 A
l) J-STD20 and JESD22
1) Current is limited by bondwire; with an Rtrur--1.3 KNVthe chip is able to carry 142 A.
3) See figure 3
4) lemax=150 ''C and duty cycle D<0.25 for Vss<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.1.11
page 2
