IPB07N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 6.2mOhm, 80A, LLFeatureV30 VDS• N-ChannelR max. SMD version 5.9 mΩDS(on)• Logic LevelI 80 AD• Low On-Resistance RDS ..
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IPB07N03L-IPP07N03L
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 6.2mOhm, 80A, LL
IPP07N03L
IPB07N03L
OptiMOSâ Buck converter series
Product Summary
Feature N-Channel Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature Avalanche rated dv/dt rated
· Ideal for fast switching buck converters
P- TO263 -3-2P- TO220 -3-1
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
IPP07N03L
IPB07N03L
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static CharacteristicsCurrent limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 123A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
IPP07N03L
IPB07N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPP07N03L
IPB07N03L
1 Power dissipationPtot = f (TC)
20
40
60
80
100
120
160 IPP07N03L
tot
2 Drain currentID = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90 IPP07N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
IPP07N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPP07N03L
IPP07N03L
IPB07N03L
5 Typ. output characteristicID = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190 IPP07N03L
6 Typ. drain-source on resistanceRDS(on) = f (ID)
parameter: VGS
10
12
14
16
20 IPP07N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
80
90
100
IPP07N03L
IPB07N03L
9 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
10
11
12
IPP07N03L
DS(on)
10 Typ. gate threshold voltageVGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
IPP07N03L
