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IPB07N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 6.2mOhm, 80A, LLFeatureV30 VDS• N-ChannelR max. SMD version 5.9 mΩDS(on)• Logic LevelI 80 AD• Low On-Resistance RDS ..
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IPB06N03LA
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
optiMosh Power-Transistor
Features
IPB06N03LA
IPI06N03LA, |PP06N03LA
. Ideal for high-frequency dc/dc converters
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM)
. Very low on-resistance R won)
. Superior thermal resistance
. 175 "C operating temperature
Product Summary
V03 25 V
R DS(on),max (SMD version) 5.9 m!)
l 50 A
P-T0263-3-2 P-T0262-3-1 P-TO220-3-1
. dv/dt rated 1
Type Package Ordering Code Marking drain
IPBO6N03LA P-T0263-3-2 Q67042-S4146 O6N03LA pm 2
|Pl06N03LA P-T0262-3-1 Q67042-S4147 06N03LA giant
|PP06N03LA P-T0220-3-1 Q67042-S4148 06N03LA gnurgce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TC=25 oCl) 50 A
Tc=100 ''C 50
Pulsed drain current ID,pulse TC=25 °C2) 350
Avalanche energy, single pulse E AS I 0:45 A, Rcs=25 f2 225 mJ
10:50 A, VDS=20 v,
Reverse diode dv/dt dv/dt dildt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage” VGS +20 V
Power dissipation Ptot TC=25 ''C 83
Operating and storage temperature Ts, Tstg -55 ... 175 ''C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.3
page 1 2003-12-18
CP""''"
Infineon
lechnologies
IPB06N03LA
IPI06N03LA, |PP06N03LA
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 1.8 K/W
SMD version, device on PCB RNA minimal footprint - - 62
6 cm2 cooling area'') - - 40
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 25 - - V
Gate threshold voltage Vsath) VDS=VGS, ID=4O pA 1.2 1.6 2
V =25 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=25 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Rosmn) VGS=4.5 V, I 0:30 A - 7.9 9.9 m9
Vss=4.5 V, [0:30 A,
SMD version - 7.6 9.5
Vss=10 V, ID=30 A - 5.2 6.2
VGS=10 V, ID=30 A,
SMD version - 4.9 5.9
Gate resistance RG - 1.2 - f2
V >2ll R ,
Transconductance " I 33' I DI DS(on)max 26 52 - S
ID--30 A
1) Current is limited by bondwire; with an RmJC=1.8 K/Wthe chip is able to carry 91 A.
2) See figure 3
3) lemax=150 ''C and duty cycle D<0.25 for VGS<-5 V
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 2
