IPB04N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LLCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
IPB04N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 3.9mΩDS(on),max• N-chann ..
IPB04N03LA G , OptiMOS®2 Power-Transistor
IPB050N06NG , OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification
IPB055N03LG , OptiMOS™3 Power-Transistor
IPB05N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LLFeatureV 30 VDS• N-ChannelR max. SMD version 4.9 mΩDS(on)• Logic LevelI 80 AD• Very low on-resistan ..
IRL2910PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91375BIRL2910®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Technology V = 10 ..
IRL2910S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IRL2910STRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because ofits low internal connection resistance and can dissipate upto 2.0W in a typi ..
IRL2910STRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL3102 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at powerdissipation levels to approximately 50 watts. The lowthermal resistance and l ..
IRL3102S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD 9.1691AIRL3102SPRELIMINARY®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface MountV = 2 ..
IPB04N03L
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
IPP04N03L
IPB04N03L
OptiMOSâ Buck converter series
Product Summary
Feature· N-Channel
· Logic Level
· Excellent Gate Charge x R
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter
P- TO263 -3-2P- TO220 -3-1
IPP04N03L
IPB04N03L
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
IPP04N03L
IPB04N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPP04N03L
IPB04N03L
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
200
IPP04N03L
tot
2 Drain currentD = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90
IPP04N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
IPP04N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPP04N03L
IPP04N03L
IPB04N03L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190
IPP04N03L
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
11
12
14
IPP04N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
35
IPP04N03L
IPB04N03L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 45 A, VGS = 10 V
10
IPP04N03L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
IPP04N03L
