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IP4221CZ6-S |IP4221CZ6SNXPN/a10000avaiESD protection for high-speed interfaces


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IP4221CZ6-S
ESD protection for high-speed interfaces
1. Product profile
1.1 General description

The device is designed to protect high-speed interfaces such as USB 2.0, Ethernet and
Digital Visual Interface (DVI) against ElectroStatic Discharge (ESD).
The device includes four high-level ESD protection diode structures for high-speed signal
lines and is encapsulated in a leadless ultra small DFN1410-6 (SOT886) plastic package.
Special diode configuration protects all signal lines and offers ultra low line capacitance of
only 1 pF. The rail-to-rail diodes are connected to the Zener diode which allows ESD
protection to be independent of supply voltage.
1.2 Features and benefits
System ESD protection for high-speed data lines such as USB 2.0, Ethernet and DVI All signal lines with integrated rail-to-rail clamping diodes for downstream
ESD protection of 8 kV according to IEC 61000-4-2, level4 Line capacitance of only 1 pF for each channel Leadless ultra small DFN1410-6 package: 1 1.45 0.5 mm; pitch 0.5 mm
1.3 Applications

The device is designed for high-speed receiver and transmitter port protection: Mobile phones, smartphones and handsets TVs and monitors DVD recorders and players Notebooks, mother boards, graphic cards and ports Set-top boxes and game consoles
IP4221CZ6-S
ESD protection for high-speed interfaces
Rev. 2 — 13 December 2012 Product data sheet
NXP Semiconductors IP4221CZ6-S
ESD protection for high-speed interfaces
2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] All pins to ground.
Table 1. Pinning
Table 2. Ordering information

IP4221CZ6-S DFN1410-6 plastic extremely thin small outline package; leads; 6 terminals; body 1 1.45 0.5 mm
SOT886
Table 3. Marking codes

IP4221CZ6-S 1S
Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). input voltage 0.5 +5.5 V
VESD electrostatic discharge
voltage
IEC 61000-4-2, level4;
contact discharge
[1] 8+8 kV
Tstg storage temperature 55 +125 C
Tamb ambient temperature 40 +85 C
NXP Semiconductors IP4221CZ6-S
ESD protection for high-speed interfaces
6. Characteristics

[1] This parameter is guaranteed by design.
[2] Pins 1, 3, 4 and 6 are measured to ground.
[3] All pins measured to ground (pin 2).
[4] Measured from pin 5 to pin 2.
7. Application information
7.1 USB 1.1 and 2.0 protection

Table 5. Characteristics

Tamb =25 C unless otherwise specified.
C(I/O-GND) input/output to ground
capacitance= 0 V; f=1 MHz;
VCC =3V
[1][2] -1 1.2 pF
IRM reverse leakage current VI =3V [3][2]- - 100 nA
VBRzd Zener diode breakdown
voltage =1 mA [4] 6- 9V forward voltage Itest =10 mA - 0.7 - V
NXP Semiconductors IP4221CZ6-S
ESD protection for high-speed interfaces
7.2 USB On-The-GO (OTG) protection

7.3 Universal SIM card protection
NXP Semiconductors IP4221CZ6-S
ESD protection for high-speed interfaces
7.4 IEEE 1394a/b protection

NXP Semiconductors IP4221CZ6-S
ESD protection for high-speed interfaces
7.5 Gigabit Ethernet transceiver protection

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